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Cocoletzi, Gregorio H., Takeuchi, Noboru (2000) First-principles calculations of the growth of InSb on GaSb(110) Physical Review B, 61 (23) 15581-15584 doi:10.1103/physrevb.61.15581

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Reference TypeJournal (article/letter/editorial)
TitleFirst-principles calculations of the growth of InSb on GaSb(110)
JournalPhysical Review B
AuthorsCocoletzi, Gregorio H.Author
Takeuchi, NoboruAuthor
Year2000 (June 15)Volume61
Issue23
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.61.15581Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14152093Long-form Identifiermindat:1:5:14152093:5
GUID0
Full ReferenceCocoletzi, Gregorio H., Takeuchi, Noboru (2000) First-principles calculations of the growth of InSb on GaSb(110) Physical Review B, 61 (23) 15581-15584 doi:10.1103/physrevb.61.15581
Plain TextCocoletzi, Gregorio H., Takeuchi, Noboru (2000) First-principles calculations of the growth of InSb on GaSb(110) Physical Review B, 61 (23) 15581-15584 doi:10.1103/physrevb.61.15581
In(2000, June) Physical Review B Vol. 61 (23) American Physical Society (APS)

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Takeuchi, Noboru, Cocoletzi, Gregorio H. (2007) First-principles calculations of the structural properties ofScSi2and the formation ofScSi2−xon the Si(111) surface. Physical Review B, 76 (3) doi:10.1103/physrevb.76.035333
Takeuchi, Noboru (2000) First-principles calculations of theSi(110)(2×3)Sbsurface. Physical Review B, 61 (24) 16704-16707 doi:10.1103/physrevb.61.16704
Romero, M.T., Cocoletzi, Gregorio H., Takeuchi, Noboru (2012) First principles calculations of the Sc adsorption on Si(001)-c(2×4). Surface Science, 606 (17). 1382-1386 doi:10.1016/j.susc.2012.04.022
COTZOMI-PALETA, J., COCOLETZI, GREGORIO H., TAKEUCHI, NOBORU (2002) FIRST PRINCIPLES CALCULATIONS OF THE ADSORPTION OF GROUP III METALS ON Si(001) AT HIGH TEMPERATURE. Surface Review and Letters, 9 (5). 1641-1644 doi:10.1142/s0218625x0200413x
Rodríguez, J. A., Takeuchi, Noboru (2001) First-principles calculations of the adsorption of a single monolayer of GaAs on Si(110) Physical Review B, 64 (20) doi:10.1103/physrevb.64.205315
González-Méndez, M. E., Takeuchi, Noboru (1998) First-principles calculations of the initial growth of Pb on Si(100) Physical Review B, 58 (24) 16172-16176 doi:10.1103/physrevb.58.16172
Cocoletzi, Gregorio H., Takeuchi, Noboru (2002) First principles total energy calculations of the Al induced Si(001)-(3×4) reconstruction. Surface Science, 504. 101-107 doi:10.1016/s0039-6028(01)01915-x
Takeuchi, Noboru, Ulloa, Sergio E. (2002) First-principles calculations of the structural and electronic properties of the ScN(001) surface. Physical Review B, 65 (23) doi:10.1103/physrevb.65.235307
Sánchez-Ochoa, F., Cocoletzi, Gregorio H., Canto, Gabriel I., Takeuchi, Noboru (2014) First-principles calculations of the indigo encapsulation and adsorption by MgO nanotubes. Journal of Applied Physics, 115 (21). 213507pp. doi:10.1063/1.4881455
Sánchez-Castillo, A, Cocoletzi, Gregorio H, Takeuchi, Noboru (2003) First principles total energy calculations of the adsorption of germane and digermane on Si(001)-c(2×4). Surface Science, 547 (1). 9-18 doi:10.1016/j.susc.2003.09.026
Cocoletzi, Gregorio H., de la Cruz, Ma.T. Romero, Takeuchi, Noboru (2008) First principles total energy calculations of the surface atomic structure of yttrium disilicide on Si(111). Surface Science, 602 (2). 644-649 doi:10.1016/j.susc.2007.11.024
 
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