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Tono, Kensuke, Yeom, Han Woong, Matsuda, Iwao, Ohta, Toshiaki (2000) Electronic structure of the Si(001) surface with Pb adsorbates. Physical Review B, 61 (23) 15866-15872 doi:10.1103/physrevb.61.15866

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Reference TypeJournal (article/letter/editorial)
TitleElectronic structure of the Si(001) surface with Pb adsorbates
JournalPhysical Review B
AuthorsTono, KensukeAuthor
Yeom, Han WoongAuthor
Matsuda, IwaoAuthor
Ohta, ToshiakiAuthor
Year2000 (June 15)Volume61
Issue23
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.61.15866Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14152142Long-form Identifiermindat:1:5:14152142:0
GUID0
Full ReferenceTono, Kensuke, Yeom, Han Woong, Matsuda, Iwao, Ohta, Toshiaki (2000) Electronic structure of the Si(001) surface with Pb adsorbates. Physical Review B, 61 (23) 15866-15872 doi:10.1103/physrevb.61.15866
Plain TextTono, Kensuke, Yeom, Han Woong, Matsuda, Iwao, Ohta, Toshiaki (2000) Electronic structure of the Si(001) surface with Pb adsorbates. Physical Review B, 61 (23) 15866-15872 doi:10.1103/physrevb.61.15866
In(2000, June) Physical Review B Vol. 61 (23) American Physical Society (APS)

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Matsuda, Iwao, Yeom, Han Woong, Tono, Kensuke, Ohta, Toshiaki (1999) Electronic structure of theSi(001)c(6×2)-Ag surface studied by angle-resolved photoelectron spectroscopy using synchrotron radiation. Physical Review B, 59 (24) 15784-15788 doi:10.1103/physrevb.59.15784
Matsuda, Iwao, Yeom, Han Woong, Tanikawa, Takehiro, Tono, Kensuke, Nagao, Tadaaki, Hasegawa, Shuji, Ohta, Toshiaki (2001) Growth and electron quantization of metastable silver films on Si(001) Physical Review B, 63 (12) doi:10.1103/physrevb.63.125325
Matsuda, Iwao, Yeom, Han Woong, Tono, Kensuke, Ohta, Toshiaki (1999) Angle-resolved photoemission study of electronic structure development during Ag growth on the Si(001) surface. Surface Science, 438 (1). 231-236 doi:10.1016/s0039-6028(99)00574-9
Matsui, Fumihiko, Yeom, Han Woong, Matsuda, Iwao, Ohta, Toshiaki (2000) Adsorption and reaction of acetylene and ethylene on theSi(001)2×1surface. Physical Review B, 62 (8) 5036-5044 doi:10.1103/physrevb.62.5036
Matsuda, Iwao, Ohta, Toshiaki, Yeom, Han Woong (2002) In-plane dispersion of the quantum-well states of the epitaxial silver films on silicon. Physical Review B, 65 (8) doi:10.1103/physrevb.65.085327
Yeom, H. W., Kim, J. W., Tono, K., Matsuda, I., Ohta, T. (2003) Electronic structure of monolayer and double-layer Ge on Si(001) Physical Review B, 67 (8) doi:10.1103/physrevb.67.085310
Yeom, H. W., Matsuda, I., Tono, K., Ohta, T. (1998) Electronic structures of theSi(001)2×3−Agsurface. Physical Review B, 57 (7) 3949-3954 doi:10.1103/physrevb.57.3949
Matsuda, Iwao, Hengsberger, Matthias, Baumberger, Felix, Greber, Thomas, Yeom, Han Woong, Osterwalder, Jürg (2003) Reinvestigation of the band structure of theSi(111)5×2-Au surface. Physical Review B, 68 (19) doi:10.1103/physrevb.68.195319
Sakamoto, Kazuyuki, Doi, Satoshi, Ushimi, Yoshimitsu, Ohno, Kenichi, Yeom, Han Woong, Ohta, Toshiaki, Suto, Shozo, Uchida, Wakio (1999) Adsorption process of metastable molecular oxygen on a Si(111)-(7×7)surface. Physical Review B, 60 (12) doi:10.1103/physrevb.60.r8465
Yeom, H. W., Matsuda, I., Chao, Y.-C., Hara, S., Yoshida, S., Uhrberg, R. I. G. (2000) Hydrogen-induced3×1phase of the Si-rich3C−SiC(001)surface. Physical Review B, 61 (4) doi:10.1103/physrevb.61.r2417
Kang, Se Hun, Kim, Keun Su, Yeom, Han Woong (2008) Electronic structure of Au-induced surface phases on Si(110): LEED and angle-resolved photoemission measurements. Physical Review B, 78 (7) doi:10.1103/physrevb.78.075315
 
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