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Ganichev, S. D., Ketterl, H., Prettl, W., Merkulov, I. A., Perel, V. I., Yassievich, I. N., Malyshev, A. V. (2001) Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities. Physical Review B, 63 (20) doi:10.1103/physrevb.63.201204

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Reference TypeJournal (article/letter/editorial)
TitleGiant negative magnetoresistance in semiconductors doped by multiply charged deep impurities
JournalPhysical Review B
AuthorsGanichev, S. D.Author
Ketterl, H.Author
Prettl, W.Author
Merkulov, I. A.Author
Perel, V. I.Author
Yassievich, I. N.Author
Malyshev, A. V.Author
Year2001 (May 7)Volume63
Issue20
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.63.201204Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14156662Long-form Identifiermindat:1:5:14156662:9
GUID0
Full ReferenceGanichev, S. D., Ketterl, H., Prettl, W., Merkulov, I. A., Perel, V. I., Yassievich, I. N., Malyshev, A. V. (2001) Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities. Physical Review B, 63 (20) doi:10.1103/physrevb.63.201204
Plain TextGanichev, S. D., Ketterl, H., Prettl, W., Merkulov, I. A., Perel, V. I., Yassievich, I. N., Malyshev, A. V. (2001) Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities. Physical Review B, 63 (20) doi:10.1103/physrevb.63.201204
In(2001, May) Physical Review B Vol. 63 (20) American Physical Society (APS)

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Ganichev, S. D., Yassievich, I. N., Perel, V. I., Ketterl, H., Prettl, W. (2002) Tunneling ionization of deep centers in high-frequency electric fields. Physical Review B, 65 (8) doi:10.1103/physrevb.65.085203
Perel’, V. I., Tarasenko, S. A., Yassievich, I. N., Ganichev, S. D., Bel’kov, V. V., Prettl, W. (2003) Spin-dependent tunneling through a symmetric semiconductor barrier. Physical Review B, 67 (20) doi:10.1103/physrevb.67.201304
Ziemann, E., Ganichev, S. D., Prettl, W., Yassievich, I. N., Perel, V. I. (2000) Characterization of deep impurities in semiconductors by terahertz tunneling ionization. Journal of Applied Physics, 87 (8). 3843-3849 doi:10.1063/1.372423
Ganichev, S. D., Ziemann, E., Gleim, Th., Prettl, W., Yassievich, I. N., Perel, V. I., Wilke, I., Haller, E. E. (1998) Carrier Tunneling in High-Frequency Electric Fields. Physical Review Letters, 80 (11). 2409-2412 doi:10.1103/physrevlett.80.2409
Ganichev, S. D., Ziemann, E., Prettl, W., Yassievich, I. N., Istratov, A. A., Weber, E. R. (2000) Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors. Physical Review B, 61 (15) 10361-10365 doi:10.1103/physrevb.61.10361
Ganichev, S. D., Raab, W., Zepezauer, E., Prettl, W., Yassievich, I. N. (1997) Storage of electrons in shallow donor excited states of GaP:Te. Physical Review B, 55 (15) 9243-9246 doi:10.1103/physrevb.55.9243
Ganichev, S. D., Prettl, W., Yassievich, I. N. (1997) Deep impurity-center ionization by far-infrared radiation. Physics of the Solid State, 39. 1703-1726 doi:10.1134/1.1130157
Ganichev, S. D., Yassievich, I. N., Prettl, W., Diener, J., Meyer, B. K., Benz, K. W. (1995) Tunneling Ionization of AutolocalizedDX−Centers in Terahertz Fields. Physical Review Letters, 75 (8). 1590-1593 doi:10.1103/physrevlett.75.1590
Ivanchik, I. I., Khokhlov, D. R., Morozov, A. V., Terekhov, A. A., Slyn’ko, E. I., Slyn’ko, V. I., de Visser, A., Dobrowolski, W. D. (2000) Giant negative magnetoresistance effect in PbTe(Yb,Mn) Physical Review B, 61 (22) doi:10.1103/physrevb.61.r14889
Malyshev, A. V., Merkulov, I. A., Rodina, A. V. (1997) Theory of acceptor-ground-state description and hot photoluminescence in cubic semiconductors. Physical Review B, 55 (7) 4388-4399 doi:10.1103/physrevb.55.4388
Tarasenko, S. A., Perel', V. I., Yassievich, I. N. (2004) In-Plane Electric Current Is Induced by Tunneling of Spin-Polarized Carriers. Physical Review Letters, 93 (5). doi:10.1103/physrevlett.93.056601
 
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