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Motooka, Teruaki, Nishihira, Ken, Munetoh, Shinji, Moriguchi, Koji, Shintani, Akira (2001) Reply to “Comment on ‘Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms’ ”. Physical Review B, 63 (23) doi:10.1103/physrevb.63.237402

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Reference TypeJournal (article/letter/editorial)
TitleReply to “Comment on ‘Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms’ ”
JournalPhysical Review B
AuthorsMotooka, TeruakiAuthor
Nishihira, KenAuthor
Munetoh, ShinjiAuthor
Moriguchi, KojiAuthor
Shintani, AkiraAuthor
Year2001 (May 11)Volume63
Issue23
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.63.237402Search in ResearchGate
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Mindat Ref. ID14157041Long-form Identifiermindat:1:5:14157041:1
GUID0
Full ReferenceMotooka, Teruaki, Nishihira, Ken, Munetoh, Shinji, Moriguchi, Koji, Shintani, Akira (2001) Reply to “Comment on ‘Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms’ ”. Physical Review B, 63 (23) doi:10.1103/physrevb.63.237402
Plain TextMotooka, Teruaki, Nishihira, Ken, Munetoh, Shinji, Moriguchi, Koji, Shintani, Akira (2001) Reply to “Comment on ‘Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms’ ”. Physical Review B, 63 (23) doi:10.1103/physrevb.63.237402
In(2001, May) Physical Review B Vol. 63 (23) American Physical Society (APS)

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Munetoh, Shinji, Moriguchi, Koji, Shintani, Akira, Nishihira, Ken, Motooka, Teruaki (2001) Molecular dynamics simulations of solid-phase epitaxy of Si: Defect formation processes. Physical Review B, 64 (19) doi:10.1103/physrevb.64.193314
Motooka, T., Nisihira, K., Munetoh, S., Moriguchi, K., Shintani, A. (2000) Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms. Physical Review B, 61 (12) 8537-8540 doi:10.1103/physrevb.61.8537
Ishimaru, Manabu, Munetoh, Shinji, Motooka, Teruaki, Moriguchi, Koji, Shintani, Akira (1998) Molecular-dynamics studies on defect-formation processes during crystal growth of silicon from melt. Physical Review B, 58 (19) 12583-12586 doi:10.1103/physrevb.58.12583
Moriguchi, Koji, Munetoh, Shinji, Shintani, Akira, Motooka, Teruaki (2001) Empirical potential description of energetics and thermodynamic properties in expanded-volume silicon clathrates. Physical Review B, 64 (19) doi:10.1103/physrevb.64.195409
Munetoh, Shinji, Moriguchi, Koji, Kamei, Kazuhito, Shintani, Akira, Motooka, Teruaki (2001) Epitaxial Growth of a Low-Density Framework Form of Crystalline Silicon: A Molecular-Dynamics Study. Physical Review Letters, 86 (21). 4879-4882 doi:10.1103/physrevlett.86.4879
Ishimaru, Manabu (2001) Comment on “Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms”. Physical Review B, 63 (23) doi:10.1103/physrevb.63.237401
Munetoh, Shinji, Motooka, Teruaki, Moriguchi, Koji, Shintani, Akira (2007) Interatomic potential for Si–O systems using Tersoff parameterization. Computational Materials Science, 39 (2). 334-339 doi:10.1016/j.commatsci.2006.06.010
Nishihira, Ken, Munetoh, Shinji, Motooka, Teruaki (2000) Uniaxial strain observed in solid/liquid interface during crystal growth from melted Si: a molecular dynamics study. Journal of Crystal Growth, 210 (1). 60-64 doi:10.1016/s0022-0248(99)00647-8
Ishimaru, Manabu, Munetoh, Shinji, Motooka, Teruaki, Moriguchi, Koji, Shintani, Akira (1998) Behavior of impurity atoms during crystal growth from melted silicon: carbon atoms. Journal of Crystal Growth, 194 (2). 178-188 doi:10.1016/s0022-0248(98)00728-3
Moriguchi, Koji, Munetoh, Shinji, Shintani, Akira (2000) First-principles study ofSi34−xGexclathrates: Direct wide-gap semiconductors in Si-Ge alloys. Physical Review B, 62 (11) 7138-7143 doi:10.1103/physrevb.62.7138
Motooka, Teruaki, Munetoh, Shinji (2004) Molecular-dynamics simulations of nucleation and crystallization in supercooled liquid silicon: Temperature-gradient effects. Physical Review B, 69 (7) doi:10.1103/physrevb.69.073307
 
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