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Wang, Lin-Wang (2001) Calculations of carrier localization inInxGa1−xN. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245107

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Reference TypeJournal (article/letter/editorial)
TitleCalculations of carrier localization inInxGa1−xN
JournalPhysical Review B
AuthorsWang, Lin-WangAuthor
Year2001 (June 4)Volume63
Issue24
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.63.245107Search in ResearchGate
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Mindat Ref. ID14157063Long-form Identifiermindat:1:5:14157063:3
GUID0
Full ReferenceWang, Lin-Wang (2001) Calculations of carrier localization inInxGa1−xN. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245107
Plain TextWang, Lin-Wang (2001) Calculations of carrier localization inInxGa1−xN. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245107
In(2001, May) Physical Review B Vol. 63 (24) American Physical Society (APS)

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Brosseau, Colin-N., Perrin, Mathieu, Silva, Carlos, Leonelli, Richard (2010) Carrier recombination dynamics inInxGa1−xN/GaNmultiple quantum wells. Physical Review B, 82 (8) doi:10.1103/physrevb.82.085305
Teles, L. K., Furthmüller, J., Scolfaro, L. M. R., Leite, J. R., Bechstedt, F. (2001) Influence of composition fluctuations and strain on gap bowing inInxGa1−xN. Physical Review B, 63 (8) doi:10.1103/physrevb.63.085204
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Wang, H., Chen, A.-B. (2001) Calculations of acceptor ionization energies in GaN. Physical Review B, 63 (12) doi:10.1103/physrevb.63.125212
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Sénès, M., Smith, K. L., Smeeton, T. M., Hooper, S. E., Heffernan, J. (2007) Strong carrier confinement inInxGa1−xN∕GaNquantum dots grown by molecular beam epitaxy. Physical Review B, 75 (4) doi:10.1103/physrevb.75.045314
Lee, Byounghak, Wang, Lin-Wang (2006) Electronic structure of zinc-blendeAlxGa1−xN: Screened-exchange study. Physical Review B, 73 (15) doi:10.1103/physrevb.73.153309
Levine, Gregory, Muthukumar, V. N. (2001) Localization transition in the Mermin model. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245112
Neogi, A., Yoshida, H., Wada, O. (2001) Effect of thermally induced charged-carrier transfer on near-infrared intersubband transitions inInxGa1−xAs/AlAs/AlyAs1−ySb/InPcoupled quantum-well structure. Physical Review B, 63 (23) doi:10.1103/physrevb.63.235320
Garcia-Lekue, A., Wang, Lin-Wang (2006) Elastic quantum transport calculations for molecular nanodevices using plane waves. Physical Review B, 74 (24) doi:10.1103/physrevb.74.245404
Wang, T., Bai, J., Sakai, S. (2001) Modulation-doping influence on the photoluminescence from the two-dimensional electron gas ofAlxGa1−xN/GaNheterostructures. Physical Review B, 63 (20) doi:10.1103/physrevb.63.205320
 
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