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Zhang, X. C., Pfeuffer-Jeschke, A., Ortner, K., Hock, V., Buhmann, H., Becker, C. R., Landwehr, G. (2001) Rashba splitting inn-type modulation-doped HgTe quantum wells with an inverted band structure. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245305

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Reference TypeJournal (article/letter/editorial)
TitleRashba splitting inn-type modulation-doped HgTe quantum wells with an inverted band structure
JournalPhysical Review B
AuthorsZhang, X. C.Author
Pfeuffer-Jeschke, A.Author
Ortner, K.Author
Hock, V.Author
Buhmann, H.Author
Becker, C. R.Author
Landwehr, G.Author
Year2001 (May 29)Volume63
Issue24
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.63.245305Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14157087Long-form Identifiermindat:1:5:14157087:9
GUID0
Full ReferenceZhang, X. C., Pfeuffer-Jeschke, A., Ortner, K., Hock, V., Buhmann, H., Becker, C. R., Landwehr, G. (2001) Rashba splitting inn-type modulation-doped HgTe quantum wells with an inverted band structure. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245305
Plain TextZhang, X. C., Pfeuffer-Jeschke, A., Ortner, K., Hock, V., Buhmann, H., Becker, C. R., Landwehr, G. (2001) Rashba splitting inn-type modulation-doped HgTe quantum wells with an inverted band structure. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245305
In(2001, May) Physical Review B Vol. 63 (24) American Physical Society (APS)

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Zhang, X. C., Pfeuffer-Jeschke, A., Ortner, K., Becker, C. R., Landwehr, G. (2002) Absence of magneto-intersubband scattering inn-type HgTe quantum wells. Physical Review B, 65 (4) doi:10.1103/physrevb.65.045324
Ortner, K., Zhang, X. C., Pfeuffer-Jeschke, A., Becker, C. R., Landwehr, G., Molenkamp, L. W. (2002) Valence band structure ofHgTe/Hg1−xCdxTesingle quantum wells. Physical Review B, 66 (7) doi:10.1103/physrevb.66.075322
Zhang, X. C., Ortner, K., Pfeuffer-Jeschke, A., Becker, C. R., Landwehr, G. (2004) Effectivegfactor ofn-typeHgTe/Hg1−xCdxTesingle quantum wells. Physical Review B, 69 (11) doi:10.1103/physrevb.69.115340
Ortner, K., Zhang, X. C., Oehling, S., Gerschütz, J., Pfeuffer-Jeschke, A., Hock, V., Becker, C. R., Landwehr, G., Molenkamp, L. W. (2001) Growth and characterization of p-type HgTe/Hg1−xCdxTe single quantum wells using nitrogen and arsenic. Applied Physics Letters, 79 (24). 3980-3982 doi:10.1063/1.1425465
Novik, E. G., Pfeuffer-Jeschke, A., Jungwirth, T., Latussek, V., Becker, C. R., Landwehr, G., Buhmann, H., Molenkamp, L. W. (2005) Band structure of semimagneticHg1−yMnyTequantum wells. Physical Review B, 72 (3) doi:10.1103/physrevb.72.035321
Becker, C.R., Gui, Y.S., Liu, J., Daumer, V., Ortner, K., Hock, V., Pfeuffer-Jeschke, A., Buhmann, H., Molenkamp, L.W. (2002) Growth and Magneto-Transport of Gate Controlled n-Type HgTe/Hg0.3Cd0.7Te Quantum Wells with the Inclusion of Mn. physica status solidi (b), 229 (2). 775-779 doi:10.1002/1521-3951(200201)229:2<775::aid-pssb775>3.0.co;2-w
Becker, C.R., Zhang, X.C., Ortner, K., Pfeuffer-Jeschke, A., Latussek, V., Daumer, V., Landwehr, G., Molenkamp, L.W. (2004) MBE growth and characterization of HgTe based quantum wells and superlattices. Journal of Alloys and Compounds, 371. 6-9 doi:10.1016/j.jallcom.2003.04.002
Becker, C. R., Latussek, V., Pfeuffer-Jeschke, A., Landwehr, G., Molenkamp, L. W. (2000) Band structure and its temperature dependence for type-IIIHgTe/Hg1−xCdxTesuperlattices and their semimetal constituent. Physical Review B, 62 (15) 10353-10363 doi:10.1103/physrevb.62.10353
von Truchseß, M., Pfeuffer-Jeschke, A., Becker, C. R., Landwehr, G., Batke, E. (2000) Electronic band structure of HgSe from Fourier transform spectroscopy. Physical Review B, 61 (3) 1666-1669 doi:10.1103/physrevb.61.1666
Becker, C. R., Latussek, V., Landwehr, G., Molenkamp, L. W. (2003) Inverted band structure of type-IIIHgTe/Hg1−xCdxTesuperlattices and its temperature dependence. Physical Review B, 68 (3) doi:10.1103/physrevb.68.035202
Pfeuffer-Jeschke, A., Goschenhofer, F., Cheng, S.J., Latussek, V., Gerschütz, J., Becker, C.R., Gerhardts, R.R., Landwehr, G. (1998) Cyclotron masses of asymmetrically doped HgTe quantum wells. Physica B: Condensed Matter, 256. 486-489 doi:10.1016/s0921-4526(98)00538-9
 
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