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Kawaharazuka, A., Saku, T., Kikuchi, C. A., Horikoshi, Y., Hirayama, Y. (2001) Free GaAs surfaces studied using a back-gated undopedGaAs/AlxGa1−xAsheterostructure. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245309

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Reference TypeJournal (article/letter/editorial)
TitleFree GaAs surfaces studied using a back-gated undopedGaAs/AlxGa1−xAsheterostructure
JournalPhysical Review B
AuthorsKawaharazuka, A.Author
Saku, T.Author
Kikuchi, C. A.Author
Horikoshi, Y.Author
Hirayama, Y.Author
Year2001 (June 4)Volume63
Issue24
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.63.245309Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14157091Long-form Identifiermindat:1:5:14157091:6
GUID0
Full ReferenceKawaharazuka, A., Saku, T., Kikuchi, C. A., Horikoshi, Y., Hirayama, Y. (2001) Free GaAs surfaces studied using a back-gated undopedGaAs/AlxGa1−xAsheterostructure. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245309
Plain TextKawaharazuka, A., Saku, T., Kikuchi, C. A., Horikoshi, Y., Hirayama, Y. (2001) Free GaAs surfaces studied using a back-gated undopedGaAs/AlxGa1−xAsheterostructure. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245309
In(2001, May) Physical Review B Vol. 63 (24) American Physical Society (APS)

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Kawaharazuka, A., Saku, T., Tokura, Y., Horikoshi, Y., Hirayama, Y. (2001) Transport characteristics of electrons in weak short-period two-dimensional potential arrays. Applied Physics Letters, 79 (3). 427-429 doi:10.1063/1.1386621
Hirayama, Y., Saku, T., Horikoshi, Y. (1989) Electronic transport through very short and narrow channels constricted in GaAs by highly resistive Ga-implanted regions. Physical Review B, 39 (8) 5535-5537 doi:10.1103/physrevb.39.5535
Tarucha, S., Saku, T., Hirayama, Y., Horikoshi, Y. (1992) Bend-resistance characteristics of macroscopic four-terminal devices with a high electron mobility. Physical Review B, 45 (23) 13465-13468 doi:10.1103/physrevb.45.13465
Hirayama, Y., Tarucha, S., Saku, T., Horikoshi, Y. (1991) Hall effect in macroscopic ballistic four-terminal square structures. Physical Review B, 44 (7) 3440-3443 doi:10.1103/physrevb.44.3440
Takagaki, Y., Hirayama, Y., Saku, T., Tarucha, S. (1996) Ballistic transmission of composite fermions in a side-gated crossed-wire junction. Physical Review B, 53 (15) 10060-10064 doi:10.1103/physrevb.53.10060
Yusa, G., Muraki, K., Saku, T., Hirayama, Y. (2004) Intralayer backscattering in narrowGaAs/AlxGa1−xAs/GaAsbilayer channels. Physical Review B, 69 (8) doi:10.1103/physrevb.69.085323
Kawaharazuka, A., Saku, T., Hirayama, Y., Horikoshi, Y. (2000) Formation of a two-dimensional electron gas in an inverted undoped heterostructure with a shallow channel depth. Journal of Applied Physics, 87 (2). 952-954 doi:10.1063/1.371965
Tokura, Y., Saku, T., Horikoshi, Y. (1996) Electron scattering by steps in a vicinal heterointerface. Physical Review B, 53 (16) doi:10.1103/physrevb.53.r10528
Honold, A., Saku, T., Horikoshi, Y., Köhler, K. (1992) Optical dephasing of light-hole excitons in GaAs single quantum wells. Physical Review B, 45 (11) 6010-6014 doi:10.1103/physrevb.45.6010
Tokura, Y., Saku, T., Tarucha, S., Horikoshi, Y. (1992) Anisotropic roughness scattering at a heterostructure interface. Physical Review B, 46 (23) 15558-15561 doi:10.1103/physrevb.46.15558
Hirayama, Y., Saku, T. (1990) Transport characteristics of series ballistic point contacts. Physical Review B, 41 (5) 2927-2930 doi:10.1103/physrevb.41.2927
 
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