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Kim, J. W., Yeom, H. W., Chung, Y. D., Jeong, K., Whang, C. N., Lee, M. K., Shin, H. J. (2002) Chemical configuration of nitrogen in ultrathin Si oxynitride on Si(100) Physical Review B, 66 (3) doi:10.1103/physrevb.66.035312

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Reference TypeJournal (article/letter/editorial)
TitleChemical configuration of nitrogen in ultrathin Si oxynitride on Si(100)
JournalPhysical Review B
AuthorsKim, J. W.Author
Yeom, H. W.Author
Chung, Y. D.Author
Jeong, K.Author
Whang, C. N.Author
Lee, M. K.Author
Shin, H. J.Author
Year2002 (July 10)Volume66
Issue3
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.66.035312Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14165142Long-form Identifiermindat:1:5:14165142:4
GUID0
Full ReferenceKim, J. W., Yeom, H. W., Chung, Y. D., Jeong, K., Whang, C. N., Lee, M. K., Shin, H. J. (2002) Chemical configuration of nitrogen in ultrathin Si oxynitride on Si(100) Physical Review B, 66 (3) doi:10.1103/physrevb.66.035312
Plain TextKim, J. W., Yeom, H. W., Chung, Y. D., Jeong, K., Whang, C. N., Lee, M. K., Shin, H. J. (2002) Chemical configuration of nitrogen in ultrathin Si oxynitride on Si(100) Physical Review B, 66 (3) doi:10.1103/physrevb.66.035312
In(2002, July) Physical Review B Vol. 66 (3) American Physical Society (APS)

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Chung, Y. D., Kim, J. W., Whang, C. N., Yeom, H. W. (2002) Adsorption and reaction of NO on the Si(001) surface. Physical Review B, 65 (15) doi:10.1103/physrevb.65.155310
Kim, J. W., Yeom, H. W., Kong, K. J., Yu, B. D., Ahn, D. Y., Chung, Y. D., Whang, C. N., Yi, H., Ha, Y. H., Moon, D. W. (2003) Spontaneous N Incorporation onto a Si(100) Surface. Physical Review Letters, 90 (10). doi:10.1103/physrevlett.90.106101
Chung, J. W., Baek, D. H., Kim, B. O., Yeom, H. W., Kim, C. Y., Jeong, J. I., Shin, H. J. (1992) Interaction of low-energy oxygen ions with the Si(100) surface. Physical Review B, 45 (4) 1705-1711 doi:10.1103/physrevb.45.1705
Lee, J.-S., Lee, K.-B., Park, Y. J., Kim, T. G., Song, J. H., Chae, K. H., Lee, J., Whang, C. N., Jeong, K., Kim, D.-H., Shin, S.-C. (2004) Modification of interface magnetic anisotropy by ion irradiation on epitaxial Cu/Ni/Cu(002)/ Si(100) films. Physical Review B, 69 (17) doi:10.1103/physrevb.69.172405
Kim, Yu Kwon, Lee, Hyun Seok, Yeom, H. W., Ryoo, Doo-Yeol, Huh, Sang-Bum, Lee, Jeong-Gun (2004) Nitrogen bonding structure in ultrathin silicon oxynitride films on Si(100) prepared by plasma nitridation. Physical Review B, 70 (16) doi:10.1103/physrevb.70.165320
Yeom, H. W., Baek, S. Y., Kim, J. W., Lee, H. S., Koh, H. (2002) Adsorption ofC2H2andC2H4on Si(001): Core-level photoemission. Physical Review B, 66 (11) doi:10.1103/physrevb.66.115308
Kim, Y. K., Kim, J. W., Lee, H. S., Kim, Y. J., Yeom, H. W. (2003) Surface electronic structures of Ca-induced reconstructions on Si(111) Physical Review B, 68 (24) doi:10.1103/physrevb.68.245312
Kim, Y. K., Ahn, J. R., Choi, W. H., Lee, H. S., Yeom, H. W. (2003) Mechanism of initial adsorption of NO on the Si(100) surface. Physical Review B, 68 (7) doi:10.1103/physrevb.68.075323
Ahn, J. R., Kim, Y. J., Lee, H. S., Hwang, C. C., Kim, B. S., Yeom, H. W. (2002) Electronic nature of one-dimensional noble-metal nanowires on the Si(5 5 12) surface. Physical Review B, 66 (15) doi:10.1103/physrevb.66.153403
Kim, Y. K., Lee, M. H., Yeom, H. W. (2005) Coverage-dependent adsorption behavior of benzene on Si(100): A high-resolution photoemission study. Physical Review B, 71 (11) doi:10.1103/physrevb.71.115311
Cho, M.-H., Roh, Y. S., Whang, C. N., Jeong, K., Choi, H. J., Nam, S. W., Ko, D.-H., Lee, J. H., Lee, N. I., Fujihara, K. (2002) Dielectric characteristics of Al2O3–HfO2 nanolaminates on Si(100). Applied Physics Letters, 81 (6). 1071-1073 doi:10.1063/1.1499223
 
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