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Polop, C., Vasco, E., Martín-Gago, J. A., Sacedón, J. L. (2002) Diffusion and nucleation of yttrium atoms on Si(111)7×7: A growth model. Physical Review B, 66 (8) doi:10.1103/physrevb.66.085324

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Reference TypeJournal (article/letter/editorial)
TitleDiffusion and nucleation of yttrium atoms on Si(111)7×7: A growth model
JournalPhysical Review B
AuthorsPolop, C.Author
Vasco, E.Author
Martín-Gago, J. A.Author
Sacedón, J. L.Author
Year2002 (August 23)Volume66
Issue8
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.66.085324Search in ResearchGate
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Mindat Ref. ID14165792Long-form Identifiermindat:1:5:14165792:1
GUID0
Full ReferencePolop, C., Vasco, E., Martín-Gago, J. A., Sacedón, J. L. (2002) Diffusion and nucleation of yttrium atoms on Si(111)7×7: A growth model. Physical Review B, 66 (8) doi:10.1103/physrevb.66.085324
Plain TextPolop, C., Vasco, E., Martín-Gago, J. A., Sacedón, J. L. (2002) Diffusion and nucleation of yttrium atoms on Si(111)7×7: A growth model. Physical Review B, 66 (8) doi:10.1103/physrevb.66.085324
In(2002, August) Physical Review B Vol. 66 (8) American Physical Society (APS)

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Rogero, C., Polop, C., Magaud, L., Sacedón, J. L., de Andrés, P. L., Martín-Gago, J. A. (2002) Structural determination of two-dimensionalYSi2epitaxially grown on Si(111) Physical Review B, 66 (23) doi:10.1103/physrevb.66.235421
Rogero, C., Polop, C., Sacedón, J. L., Martín Gago, J. A. (2004) A study of the formation of yttrium silicides epitaxially grown on Si(111). Surface and Interface Analysis, 36 (8). 1195-1198 doi:10.1002/sia.1874
Martín-Gago, J. A., Rojas, C., Polop, C., Sacedón, J. L., Román, E., Goldoni, A., Paolucci, G. (1999) Atomic origin of the Si core-level photoemission components in theC(2×2)Si-Cu(110) surface alloy. Physical Review B, 59 (4) 3070-3074 doi:10.1103/physrevb.59.3070
González-González, A., Alonzo-Medina, G. M., Oliva, A. I., Polop, C., Sacedón, J. L., Vasco, E. (2011) Morphology evolution of thermally annealed polycrystalline thin films. Physical Review B, 84 (15) doi:10.1103/physrevb.84.155450
Rogero, C., de Andres, P. L., Martín-Gago, J. A. (2005) Surface atomic structure determination of three-dimensional yttrium silicide epitaxially grown on Si(111) Physical Review B, 71 (16) doi:10.1103/physrevb.71.165306
Martín-Gago, J. A., Gómez-Rodríguez, J. M., Veuillen, J. Y. (1997) Surface atomic structure of epitaxially grown erbium silicide films on Si(111)7×7. Physical Review B, 55 (8) 5136-5140 doi:10.1103/physrevb.55.5136
Vasco, E., Polop, C., Sacedón, J. L. (2008) Preventing Kinetic Roughening in Physical Vapor-Phase-Deposited Films. Physical Review Letters, 100 (1). doi:10.1103/physrevlett.100.016102
Vasco, E., Polop, C., Rodríguez-Cañas, E. (2003) Aggregation mechanisms in the adsorption of metals onSi(111)7×7. Physical Review B, 67 (23) doi:10.1103/physrevb.67.235412
Vasco, E., Polop, C., Sacedón, J. L. (2009) Reducing the surface roughness beyond the pulsed-laser-deposition limit. Physical Review E, 80 (4) doi:10.1103/physreve.80.041604
Rojas, C., Polop, C., Román, E., Martín-Gago, J. A., Gunnella, R., Brena, B., Cocco, D., Paolucci, G. (1998) Origin of the buckling in thec(2×2)-Si/Cu(110) surface alloy. Physical Review B, 57 (8) 4493-4499 doi:10.1103/physrevb.57.4493
Polop, C., Rojas, C., Martín-Gago, J. A., Fasel, R., Hayoz, J., Naumović, D., Aebi, P. (2001) Structure of Si atomic chains grown on the Si/Cu(110)c(2×2)surface alloy. Physical Review B, 63 (11) doi:10.1103/physrevb.63.115414
 
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