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Alfieri, G., Monakhov, E. V., Avset, B. S., Svensson, B. G. (2003) Evidence for identification of the divacancy-oxygen center in Si. Physical Review B, 68 (23) doi:10.1103/physrevb.68.233202

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Reference TypeJournal (article/letter/editorial)
TitleEvidence for identification of the divacancy-oxygen center in Si
JournalPhysical Review B
AuthorsAlfieri, G.Author
Monakhov, E. V.Author
Avset, B. S.Author
Svensson, B. G.Author
Year2003 (December 12)Volume68
Issue23
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.68.233202Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14169802Long-form Identifiermindat:1:5:14169802:3
GUID0
Full ReferenceAlfieri, G., Monakhov, E. V., Avset, B. S., Svensson, B. G. (2003) Evidence for identification of the divacancy-oxygen center in Si. Physical Review B, 68 (23) doi:10.1103/physrevb.68.233202
Plain TextAlfieri, G., Monakhov, E. V., Avset, B. S., Svensson, B. G. (2003) Evidence for identification of the divacancy-oxygen center in Si. Physical Review B, 68 (23) doi:10.1103/physrevb.68.233202
In(2003, December) Physical Review B Vol. 68 (23) American Physical Society (APS)

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Mikelsen, M., Monakhov, E. V., Alfieri, G., Avset, B. S., Svensson, B. G. (2005) Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon. Physical Review B, 72 (19) doi:10.1103/physrevb.72.195207
Monakhov, E. V., Ulyashin, A., Alfieri, G., Kuznetsov, A. Yu., Avset, B. S., Svensson, B. G. (2004) Divacancy annealing in Si: Influence of hydrogen. Physical Review B, 69 (15) doi:10.1103/physrevb.69.153202
Monakhov, E. V., Avset, B. S., Hallén, A., Svensson, B. G. (2002) Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si. Physical Review B, 65 (23) doi:10.1103/physrevb.65.233207
Bleka, J. H., Pintilie, I., Monakhov, E. V., Avset, B. S., Svensson, B. G. (2008) Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon. Physical Review B, 77 (7) doi:10.1103/physrevb.77.073206
Mikelsen, M., Bleka, J. H., Christensen, J. S., Monakhov, E. V., Svensson, B. G., Härkönen, J., Avset, B. S. (2007) Annealing of the divacancy-oxygen and vacancy-oxygen complexes in silicon. Physical Review B, 75 (15) doi:10.1103/physrevb.75.155202
Monakhov, E V, Alfieri, G, Avset, B S, Hallén, A, Svensson, B G (2003) Laplace transform transient spectroscopy study of a divacancy-related double acceptor centre in Si. Journal of Physics: Condensed Matter, 15 (39). doi:10.1088/0953-8984/15/39/001
Bleka, J. H., Monakhov, E. V., Svensson, B. G., Avset, B. S. (2007) Room-temperature annealing of vacancy-type defect in high-purityn-type Si. Physical Review B, 76 (23) doi:10.1103/physrevb.76.233204
Mikelsen, M, Monakhov, E V, Alfieri, G, Avset, B S, Härkönen, J, Svensson, B G (2005) Annealing of defects in irradiated silicon detector materials with high oxygen content. Journal of Physics: Condensed Matter, 17 (22). doi:10.1088/0953-8984/17/22/012
Bleka, J. H., Malmbekk, H., Monakhov, E. V., Svensson, B. G., Avset, B. S. (2012) Annealing dynamics of irradiation-induced defects in high-purity silicon in the presence of hydrogen. Physical Review B, 85 (8) doi:10.1103/physrevb.85.085210
Sihto, S.-L., Slotte, J., Lento, J., Saarinen, K., Monakhov, E. V., Kuznetsov, A. Yu., Svensson, B. G. (2003) Vacancy-phosphorus complexes in strainedSi1−xGex:Structure and stability. Physical Review B, 68 (11) doi:10.1103/physrevb.68.115307
Svensson, B. G., Monakhov, E.V., Alfieri, G., Mikelsen, M., Avset, B. S., Hallén, A. (2004) Defects and diffusion in high purity silicon for detector applications. physica status solidi (c), 1 (9). 2250-2257 doi:10.1002/pssc.200404847
 
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