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Kunsági-Máté, Sándor, Schür, Carsten, Végh, Eszter, Marek, Tamas, Strunk, Horst P. (2005) Molecular-dynamics-based model for the formation of arsenic interstitials during low–temperature growth of GaAs. Physical Review B, 72 (7) doi:10.1103/physrevb.72.075315

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Reference TypeJournal (article/letter/editorial)
TitleMolecular-dynamics-based model for the formation of arsenic interstitials during low–temperature growth of GaAs
JournalPhysical Review B
AuthorsKunsági-Máté, SándorAuthor
Schür, CarstenAuthor
Végh, EszterAuthor
Marek, TamasAuthor
Strunk, Horst P.Author
Year2005 (August 4)Volume72
Issue7
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.72.075315Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14181837Long-form Identifiermindat:1:5:14181837:7
GUID0
Full ReferenceKunsági-Máté, Sándor, Schür, Carsten, Végh, Eszter, Marek, Tamas, Strunk, Horst P. (2005) Molecular-dynamics-based model for the formation of arsenic interstitials during low–temperature growth of GaAs. Physical Review B, 72 (7) doi:10.1103/physrevb.72.075315
Plain TextKunsági-Máté, Sándor, Schür, Carsten, Végh, Eszter, Marek, Tamas, Strunk, Horst P. (2005) Molecular-dynamics-based model for the formation of arsenic interstitials during low–temperature growth of GaAs. Physical Review B, 72 (7) doi:10.1103/physrevb.72.075315
In(2005, August) Physical Review B Vol. 72 (7) American Physical Society (APS)

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Kunsági-Máté, Sándor, Schür, Carsten, Marek, Tamas, Strunk, Horst P. (2004) Energetics of growth on thec(4×4)reconstructed GaAs(001) surface and antisite formation: Anab initioapproach. Physical Review B, 69 (19) doi:10.1103/physrevb.69.193301
Kunsági-Máté, Sándor, Marek, Tamás, Schür, Carsten, Strunk, Horst P (2002) Theoretical and experimental energy barriers associated with the incorporation of excess As into GaAs(). Surface Science, 515 (1). 219-225 doi:10.1016/s0039-6028(02)01888-5
Marek, T., Kunsági-Máté, S., Strunk, H. P. (2001) Model for the incorporation of excess arsenic into interstitial positions during the low-temperature growth of GaAs(001) layers. Journal of Applied Physics, 89 (11). 6519-6522 doi:10.1063/1.1352025
Kunsági-Máté, Sándor, Végh, Eszter, Nagy, Géza, Kollár, László (2004) Quantum chemical investigations on the dynamics of hydrogen halide elimination from vinyl-halides: influence of the molecular environment. Chemical Physics Letters, 388. 84-88 doi:10.1016/j.cplett.2004.02.075
Kunsági-Máté, S., Schür, C., Marek, T. (2005) Interstitial to antisite defect conversion during the molecular beam epitaxial deposition onc(4 3 4) GaAs(001) surfaces. physica status solidi (a), 202 (15). 2971-2979 doi:10.1002/pssa.200521096
Marek, T., Schür, C., Kunsági-Máté, S. (2005) Surface orientation as a control parameter for the growth of non-stoichiometric gallium arsenide. physica status solidi (a), 202 (15). 2980-2991 doi:10.1002/pssa.200521265
Kunsági-Máté, Sándor, Végh, Eszter, Nagy, Géza, Kollár, László (2002) Influence of the Molecular Environment on the Three-Center versus Four-Center Elimination of HBr from Vinyl Bromide: A Theoretical Approach. The Journal of Physical Chemistry A, 106 (26). 6319-6324 doi:10.1021/jp014512r
Landman, J. I., Morgan, C. G., Schick, J. T., Papoulias, P., Kumar, A. (1997) Arsenic interstitials and interstitial complexes in low-temperature grown GaAs. Physical Review B, 55 (23) 15581-15586 doi:10.1103/physrevb.55.15581
Kunsági-Máté, S., Marek, N., Marek, T., Strunk, H.P. (1996) Ab-initio calculations on the dissociative reaction of an As2-molecule approaching a Ga-terminated GaAs(001)-surface. Surface Science, 365 (3). 743-747 doi:10.1016/0039-6028(96)00750-9
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Song, K. J., Castner, T. G. (2005) Low-temperature microwave response of barely metallic arsenic-doped silicon. Physical Review B, 72 (8) doi:10.1103/physrevb.72.085204
 
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