Reference Type | Journal (article/letter/editorial) |
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Title | Nanoscale structures formed in silicon cleavage studied with large-scale electronic structure calculations: Surface reconstruction, steps, and bending |
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Journal | Physical Review B |
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Authors | Hoshi, Takeo | Author |
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Iguchi, Yusuke | Author |
Fujiwara, Takeo | Author |
Year | 2005 (August 9) | Volume | 72 |
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Issue | 7 |
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Publisher | American Physical Society (APS) |
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DOI | doi:10.1103/physrevb.72.075323Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 14181845 | Long-form Identifier | mindat:1:5:14181845:2 |
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GUID | 0 |
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Full Reference | Hoshi, Takeo, Iguchi, Yusuke, Fujiwara, Takeo (2005) Nanoscale structures formed in silicon cleavage studied with large-scale electronic structure calculations: Surface reconstruction, steps, and bending. Physical Review B, 72 (7) doi:10.1103/physrevb.72.075323 |
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Plain Text | Hoshi, Takeo, Iguchi, Yusuke, Fujiwara, Takeo (2005) Nanoscale structures formed in silicon cleavage studied with large-scale electronic structure calculations: Surface reconstruction, steps, and bending. Physical Review B, 72 (7) doi:10.1103/physrevb.72.075323 |
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In | (2005, August) Physical Review B Vol. 72 (7) American Physical Society (APS) |
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