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Tan, P., Luo, X., Xu, Z., Zhang, Y., Mascarenhas, A., Xin, H., Tu, C., Ge, W. (2006) Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1−xNx alloys: A microphotoluminescence study. Physical Review B, 73 (20) doi:10.1103/physrevb.73.205205

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1−xNx alloys: A microphotoluminescence study
JournalPhysical Review B
AuthorsTan, P.Author
Luo, X.Author
Xu, Z.Author
Zhang, Y.Author
Mascarenhas, A.Author
Xin, H.Author
Tu, C.Author
Ge, W.Author
Year2006 (May)Volume73
Issue20
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.73.205205Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14183763Long-form Identifiermindat:1:5:14183763:7
GUID0
Full ReferenceTan, P., Luo, X., Xu, Z., Zhang, Y., Mascarenhas, A., Xin, H., Tu, C., Ge, W. (2006) Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1−xNx alloys: A microphotoluminescence study. Physical Review B, 73 (20) doi:10.1103/physrevb.73.205205
Plain TextTan, P., Luo, X., Xu, Z., Zhang, Y., Mascarenhas, A., Xin, H., Tu, C., Ge, W. (2006) Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1−xNx alloys: A microphotoluminescence study. Physical Review B, 73 (20) doi:10.1103/physrevb.73.205205
In(2006, May) Physical Review B Vol. 73 (20) American Physical Society (APS)

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Luo, X. D., Huang, J. S., Xu, Z. Y., Yang, C. L., Liu, J., Ge, W. K., Zhang, Y., Mascarenhas, A., Xin, H. P., Tu, C. W. (2003) Alloy states in dilute GaAs1−xNx alloys (x<1%). Applied Physics Letters, 82 (11). 1697-1699 doi:10.1063/1.1560872
Tan, P. H., Xu, Z. Y., Luo, X. D., Ge, W. K., Zhang, Y., Mascarenhas, A., Xin, H. P., Tu, C. W. (2007) Unusual carrier thermalization in a dilute GaAs1−xNx alloy. Applied Physics Letters, 90 (6). 61905pp. doi:10.1063/1.2454552
Tan, P. H., Xu, Z. Y., Luo, X. D., Ge, W. K., Zhang, Y., Mascarenhas, A., Xin, H. P., Tu, C. W. (2006) Resonant Raman scattering with the E+ band in a dilute GaAs1−xNx alloy (x=0.1%). Applied Physics Letters, 89 (10). 101912pp. doi:10.1063/1.2345605
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Zhang, Yong, Mascarenhas, A., Geisz, J. F., Xin, H. P., Tu, C. W. (2001) Discrete and continuous spectrum of nitrogen-induced bound states in heavily dopedGaAs1−xNx. Physical Review B, 63 (8) doi:10.1103/physrevb.63.085205
Wang, Y. J., Wei, X., Zhang, Y., Mascarenhas, A., Xin, H. P., Hong, Y. G., Tu, C. W. (2003) Evolution of the electron localization in a nonconventional alloy system GaAs1−xNx probed by high-magnetic-field photoluminescence. Applied Physics Letters, 82 (25). 4453-4455 doi:10.1063/1.1584789
Francoeur, S., Seong, M. J., Hanna, M. C., Geisz, J. F., Mascarenhas, A., Xin, H. P., Tu, C. W. (2003) Origin of the nitrogen-induced optical transitions inGaAs1−xNx. Physical Review B, 68 (7) doi:10.1103/physrevb.68.075207
Kozhevnikov, M., Narayanamurti, V., Reddy, C. V., Xin, H. P., Tu, C. W., Mascarenhas, A., Zhang, Y. (2000) Evolution ofGaAs1−xNxconduction states and giantAu/GaAs1−xNxSchottky barrier reduction studied by ballistic electron emission spectroscopy. Physical Review B, 61 (12) doi:10.1103/physrevb.61.r7861
Zhang, Yong, Mascarenhas, A., Xin, H. P., Tu, C. W. (2001) Scaling of band-gap reduction in heavily nitrogen doped GaAs. Physical Review B, 63 (16) doi:10.1103/physrevb.63.161303
Fluegel, B., Alberi, K., Beaton, D. A., Crooker, S. A., Ptak, A. J., Mascarenhas, A. (2012) Evolution of superclusters and delocalized states in GaAs1−xNx. Physical Review B, 86 (20) doi:10.1103/physrevb.86.205203
Ma, B. S., Su, F. H., Ding, K., Li, G. H., Zhang, Y., Mascarenhas, A., Xin, H. P., Tu, C. W. (2005) Pressure behavior of the alloy band edge and nitrogen-related centers inGaAs0.999N0.001. Physical Review B, 71 (4) doi:10.1103/physrevb.71.045213
 
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