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Russell, K. J., Narayanamurti, V., Appelbaum, Ian, Hanson, M. P., Gossard, A. C. (2006) Hot-electron mean free path of ErAs thin films grown on GaAs determined by metal-base transistor ballistic electron emission spectroscopy. Physical Review B, 74 (20) doi:10.1103/physrevb.74.205330

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Reference TypeJournal (article/letter/editorial)
TitleHot-electron mean free path of ErAs thin films grown on GaAs determined by metal-base transistor ballistic electron emission spectroscopy
JournalPhysical Review B
AuthorsRussell, K. J.Author
Narayanamurti, V.Author
Appelbaum, IanAuthor
Hanson, M. P.Author
Gossard, A. C.Author
Year2006 (November 22)Volume74
Issue20
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.74.205330Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14186795Long-form Identifiermindat:1:5:14186795:5
GUID0
Full ReferenceRussell, K. J., Narayanamurti, V., Appelbaum, Ian, Hanson, M. P., Gossard, A. C. (2006) Hot-electron mean free path of ErAs thin films grown on GaAs determined by metal-base transistor ballistic electron emission spectroscopy. Physical Review B, 74 (20) doi:10.1103/physrevb.74.205330
Plain TextRussell, K. J., Narayanamurti, V., Appelbaum, Ian, Hanson, M. P., Gossard, A. C. (2006) Hot-electron mean free path of ErAs thin films grown on GaAs determined by metal-base transistor ballistic electron emission spectroscopy. Physical Review B, 74 (20) doi:10.1103/physrevb.74.205330
In(2006, November) Physical Review B Vol. 74 (20) American Physical Society (APS)

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Yi, Wei, Appelbaum, Ian, Russell, K. J., Narayanamurti, V., Hanson, M. P., Gossard, A. C. (2004) Ballistic electron emission luminescence spectroscopy of an InAs quantum dot heterostructure. Applied Physics Letters, 85 (11). 1990-1992 doi:10.1063/1.1790595
Appelbaum, Ian, Russell, K. J., Kozhevnikov, M., Narayanamurti, V., Hanson, M. P., Gossard, A. C. (2004) Room-temperature ballistic electron emission luminescence spectroscopy with a scanning tunneling microscope. Applied Physics Letters, 84 (4). 547-549 doi:10.1063/1.1644329
Appelbaum, Ian, Yi, Wei, Russell, K. J., Narayanamurti, V., Hanson, M. P., Gossard, A. C. (2005) Vertically integrated optics for ballistic electron emission luminescence microscopy. Applied Physics Letters, 86 (6). 63110pp. doi:10.1063/1.1861961
Russell, K. J., Appelbaum, Ian, Narayanamurti, V., Hanson, M. P., Gossard, A. C. (2005) Transverse momentum nonconservation at theErAs∕GaAsinterface. Physical Review B, 71 (12) doi:10.1103/physrevb.71.121311
Appelbaum, Ian, Russell, K. J., Narayanamurti, V., Monsma, D. J., Marcus, C. M., Hanson, M. P., Gossard, A. C., Temkin, H., Perry, C. H. (2003) Ballistic electron emission luminescence. Applied Physics Letters, 82 (25). 4498-4500 doi:10.1063/1.1584524
Appelbaum, Ian, Russell, K. J., Shalish, I., Narayanamurti, V., Hanson, M. P., Gossard, A. C. (2004) Ballistic hole emission luminescence. Applied Physics Letters, 85 (12). 2265-2267 doi:10.1063/1.1793347
Appelbaum, Ian, Sheth, Rahul, Shalish, Ilan, Russell, K. J., Narayanamurti, V. (2003) Experimental test of the planar tunneling model for ballistic electron emission spectroscopy. Physical Review B, 67 (15) doi:10.1103/physrevb.67.155307
Yi, Wei, Appelbaum, Ian, Russell, Kasey J., Narayanamurti, Venkatesh, Schalek, Richard, Hanson, Micah P., Gossard, Arthur C. (2006) Vertically integrated optics for ballistic electron emission luminescence: Device and microscopy characterizations. Journal of Applied Physics, 100 (1). 13105pp. doi:10.1063/1.2208738
Appelbaum, Ian, Russell, K. J., Monsma, D. J., Narayanamurti, V., Marcus, C. M., Hanson, M. P., Gossard, A. C. (2003) Luminescent spin-valve transistor. Applied Physics Letters, 83 (22). 4571-4573 doi:10.1063/1.1630838
Appelbaum, Ian, Narayanamurti, V. (2005) Monte Carlo calculations for metal-semiconductor hot-electron injection via tunnel-junction emission. Physical Review B, 71 (4) doi:10.1103/physrevb.71.045320
Russell, K. J., Appelbaum, Ian, Yi, Wei, Monsma, D. J., Capasso, F., Marcus, C. M., Narayanamurti, V., Hanson, M. P., Gossard, A. C. (2004) Avalanche spin-valve transistor. Applied Physics Letters, 85 (19). 4502pp. doi:10.1063/1.1818339
 
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