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Garro, N., Cros, A., Llorens, J. M., García-Cristóbal, A., Cantarero, A., Gogneau, N., Sarigiannidou, E., Monroy, E., Daudin, B. (2006) Resonant Raman scattering in self-assembledGaN∕AlNquantum dots. Physical Review B, 74 (7) doi:10.1103/physrevb.74.075305

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Reference TypeJournal (article/letter/editorial)
TitleResonant Raman scattering in self-assembledGaN∕AlNquantum dots
JournalPhysical Review B
AuthorsGarro, N.Author
Cros, A.Author
Llorens, J. M.Author
García-Cristóbal, A.Author
Cantarero, A.Author
Gogneau, N.Author
Sarigiannidou, E.Author
Monroy, E.Author
Daudin, B.Author
Year2006 (August 2)Volume74
Issue7
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.74.075305Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14187839Long-form Identifiermindat:1:5:14187839:5
GUID0
Full ReferenceGarro, N., Cros, A., Llorens, J. M., García-Cristóbal, A., Cantarero, A., Gogneau, N., Sarigiannidou, E., Monroy, E., Daudin, B. (2006) Resonant Raman scattering in self-assembledGaN∕AlNquantum dots. Physical Review B, 74 (7) doi:10.1103/physrevb.74.075305
Plain TextGarro, N., Cros, A., Llorens, J. M., García-Cristóbal, A., Cantarero, A., Gogneau, N., Sarigiannidou, E., Monroy, E., Daudin, B. (2006) Resonant Raman scattering in self-assembledGaN∕AlNquantum dots. Physical Review B, 74 (7) doi:10.1103/physrevb.74.075305
In(2006, August) Physical Review B Vol. 74 (7) American Physical Society (APS)

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Cros, A., Garro, N., Llorens, J. M., García-Cristóbal, A., Cantarero, A., Gogneau, N., Monroy, E., Daudin, B. (2006) Raman study and theoretical calculations of strain in GaN quantum dot multilayers. Physical Review B, 73 (11) doi:10.1103/physrevb.73.115313
Cros, A., Garro, N., Llorens, J. M., García-Cristóbal, A., Cantarero, A., Gogneau, N., Monroy, E., Daudin, B. (2005) Raman study of strain in GaN/AlN quantum dot multilayered structures. physica status solidi (c), 2 (7). 2328-2331 doi:10.1002/pssc.200461308
Cros, A., Garro, N., Cantarero, A., Coraux, J., Renevier, H., Daudin, B. (2007) Raman scattering as a tool for the evaluation of strain inGaN∕AlNquantum dots: The effect of capping. Physical Review B, 76 (16) doi:10.1103/physrevb.76.165403
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Cros, A., Budagosky, J. A., García-Cristóbal, A., Garro, N., Cantarero, A., Founta, S., Mariette, H., Daudin, B. (2006) Influence of strain in the reduction of the internal electric field in GaN/AlN quantum dots grown ona-plane 6H-SiC. physica status solidi (b), 243 (7). 1499-1507 doi:10.1002/pssb.200565103
Mata, R., Cros, A., Budagosky, J. A., Molina-Sánchez, A., Garro, N., García-Cristóbal, A., Renard, J., Founta, S., Gayral, B., Bellet-Amalric, E., Bougerol, C., Daudin, B. (2010) Reversed polarized emission in highly straineda-plane GaN/AlN multiple quantum wells. Physical Review B, 82 (12) doi:10.1103/physrevb.82.125405
García-Cristóbal, A., Cantarero, A., Trallero-Giner, C., Cardona, M. (1998) Resonant hyper-Raman scattering in semiconductors. Physical Review B, 58 (16) 10443-10451 doi:10.1103/physrevb.58.10443
Cros, A., Budagosky, J. A., Garro, N., Cantarero, A., Coraux, J., Renevier, H., Proietti, M. G., Favre-Nicolin, V., Daudin, B. (2007) Evaluation of strain in GaN/AlN quantum dots by means of resonant Raman scattering: the effect of capping. physica status solidi (c), 4 (7). 2379-2382 doi:10.1002/pssc.200674804
Serrano, J., Cantarero, A., Cardona, M., Garro, N., Lauck, R., Tallman, R. E., Ritter, T. M., Weinstein, B. A. (2004) Raman scattering inβ-ZnS. Physical Review B, 69 (1) doi:10.1103/physrevb.69.014301
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García-Cristóbal, A., Kuball, M., Cardona, M., Cantarero, A. (1996) First-order resonant Raman scattering under an electric field. Physical Review B, 54 (16) 11492-11504 doi:10.1103/physrevb.54.11492
 
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