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Narvaez, Gustavo A., Bester, Gabriel, Zunger, Alex (2006) Carrier relaxation mechanisms in self-assembled(In,Ga)As∕GaAsquantum dots: EfficientP→SAuger relaxation of electrons. Physical Review B, 74 (7) doi:10.1103/physrevb.74.075403

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Reference TypeJournal (article/letter/editorial)
TitleCarrier relaxation mechanisms in self-assembled(In,Ga)As∕GaAsquantum dots: EfficientP→SAuger relaxation of electrons
JournalPhysical Review B
AuthorsNarvaez, Gustavo A.Author
Bester, GabrielAuthor
Zunger, AlexAuthor
Year2006 (August 1)Volume74
Issue7
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.74.075403Search in ResearchGate
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Mindat Ref. ID14187872Long-form Identifiermindat:1:5:14187872:2
GUID0
Full ReferenceNarvaez, Gustavo A., Bester, Gabriel, Zunger, Alex (2006) Carrier relaxation mechanisms in self-assembled(In,Ga)As∕GaAsquantum dots: EfficientP→SAuger relaxation of electrons. Physical Review B, 74 (7) doi:10.1103/physrevb.74.075403
Plain TextNarvaez, Gustavo A., Bester, Gabriel, Zunger, Alex (2006) Carrier relaxation mechanisms in self-assembled(In,Ga)As∕GaAsquantum dots: EfficientP→SAuger relaxation of electrons. Physical Review B, 74 (7) doi:10.1103/physrevb.74.075403
In(2006, August) Physical Review B Vol. 74 (7) American Physical Society (APS)

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Narvaez, Gustavo A., Bester, Gabriel, Zunger, Alex (2005) Pressure effects on neutral and charged excitons in self-assembled (In,Ga)As∕GaAsquantum dots. Physical Review B, 72 (4) doi:10.1103/physrevb.72.041307
Narvaez, Gustavo A., Bester, Gabriel, Zunger, Alex (2005) Excitons, biexcitons, and trions in self-assembled(In,Ga)As∕GaAsquantum dots: Recombination energies, polarization, and radiative lifetimes versus dot height. Physical Review B, 72 (24) doi:10.1103/physrevb.72.245318
Narvaez, Gustavo A., Bester, Gabriel, Franceschetti, Alberto, Zunger, Alex (2006) Excitonic exchange effects on the radiative decay time of monoexcitons and biexcitons in quantum dots. Physical Review B, 74 (20) doi:10.1103/physrevb.74.205422
He, Lixin, Bester, Gabriel, Zunger, Alex (2005) Electronic asymmetry in self-assembled quantum dot molecules made of identicalInAs∕GaAsquantum dots. Physical Review B, 72 (8) doi:10.1103/physrevb.72.081311
Bester, Gabriel, Zunger, Alex (2003) Compositional and size-dependent spectroscopic shifts in charged self-assembledInxGa1−xAs/GaAsquantum dots. Physical Review B, 68 (7) doi:10.1103/physrevb.68.073309
Narvaez, Gustavo A., Zunger, Alex (2007) Calculation of conduction-to-conduction and valence-to-valence transitions between bound states in(In,Ga)As∕GaAsquantum dots. Physical Review B, 75 (8) doi:10.1103/physrevb.75.085306
Narvaez, Gustavo A., Bester, Gabriel, Zunger, Alex (2005) Dependence of the electronic structure of self-assembled (In,Ga)As∕GaAs quantum dots on height and composition. Journal of Applied Physics, 98 (4). 43708pp. doi:10.1063/1.1980534
Bester, Gabriel, Zunger, Alex, Wu, Xifan, Vanderbilt, David (2006) Effects of linear and nonlinear piezoelectricity on the electronic properties ofInAs∕GaAsquantum dots. Physical Review B, 74 (8) doi:10.1103/physrevb.74.081305
Narvaez, Gustavo A., Zunger, Alex (2006) Nominally forbidden transitions in the interband optical spectrum of quantum dots. Physical Review B, 74 (4) doi:10.1103/physrevb.74.045316
Bester, Gabriel, Nair, Selvakumar, Zunger, Alex (2003) Pseudopotential calculation of the excitonic fine structure of million-atom self-assembledIn1−xGaxAs/GaAsquantum dots. Physical Review B, 67 (16) doi:10.1103/physrevb.67.161306
He, Lixin, Bester, Gabriel, Zunger, Alex (2004) Strain-induced interfacial hole localization in self-assembled quantum dots: CompressiveInAs∕GaAsversus tensileInAs∕InSb. Physical Review B, 70 (23) doi:10.1103/physrevb.70.235316
 
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