Reference Type | Journal (article/letter/editorial) |
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Title | High-temperature annealing and surface photovoltage shifts onSi(111)7×7 |
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Journal | Physical Review B |
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Authors | Zhang, H. M. | Author |
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Sakamoto, Kazuyuki | Author |
Hansson, G. V. | Author |
Uhrberg, R. I. G. | Author |
Year | 2008 (July 21) | Volume | 78 |
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Issue | 3 |
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Publisher | American Physical Society (APS) |
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DOI | doi:10.1103/physrevb.78.035318Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 14199265 | Long-form Identifier | mindat:1:5:14199265:7 |
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GUID | 0 |
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Full Reference | Zhang, H. M., Sakamoto, Kazuyuki, Hansson, G. V., Uhrberg, R. I. G. (2008) High-temperature annealing and surface photovoltage shifts onSi(111)7×7. Physical Review B, 78 (3) doi:10.1103/physrevb.78.035318 |
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Plain Text | Zhang, H. M., Sakamoto, Kazuyuki, Hansson, G. V., Uhrberg, R. I. G. (2008) High-temperature annealing and surface photovoltage shifts onSi(111)7×7. Physical Review B, 78 (3) doi:10.1103/physrevb.78.035318 |
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In | (2008, July) Physical Review B Vol. 78 (3) American Physical Society (APS) |
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