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Jnawali, G., Hattab, H., Bobisch, C. A., Bernhart, A., Zubkov, E., Möller, R., Horn-von Hoegen, M. (2008) Homoepitaxial growth of Bi(111) Physical Review B, 78 (3) doi:10.1103/physrevb.78.035321

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Reference TypeJournal (article/letter/editorial)
TitleHomoepitaxial growth of Bi(111)
JournalPhysical Review B
AuthorsJnawali, G.Author
Hattab, H.Author
Bobisch, C. A.Author
Bernhart, A.Author
Zubkov, E.Author
Möller, R.Author
Horn-von Hoegen, M.Author
Year2008 (July 21)Volume78
Issue3
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.78.035321Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14199268Long-form Identifiermindat:1:5:14199268:8
GUID0
Full ReferenceJnawali, G., Hattab, H., Bobisch, C. A., Bernhart, A., Zubkov, E., Möller, R., Horn-von Hoegen, M. (2008) Homoepitaxial growth of Bi(111) Physical Review B, 78 (3) doi:10.1103/physrevb.78.035321
Plain TextJnawali, G., Hattab, H., Bobisch, C. A., Bernhart, A., Zubkov, E., Möller, R., Horn-von Hoegen, M. (2008) Homoepitaxial growth of Bi(111) Physical Review B, 78 (3) doi:10.1103/physrevb.78.035321
In(2008, July) Physical Review B Vol. 78 (3) American Physical Society (APS)

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Jnawali, G., Hattab, H., Bobisch, C.A., Bernhart, A., Zubkov, E., Möller, R., Horn-von Hoegen, M. (2009) Nanoscale dislocation patterning in Bi(111)/Si(001) heteroepitaxy. Surface Science, 603 (13). 2057-2061 doi:10.1016/j.susc.2009.03.027
Jnawali, G., Wagner, Th., Hattab, H., Möller, R., Horn-von Hoegen, M. (2009) Nucleation and initial growth in the semimetallic homoepitaxial system of Bi on Bi(111) Physical Review B, 79 (19) doi:10.1103/physrevb.79.193306
Jnawali, G., Hattab, H., Krenzer, B., Horn von Hoegen, M. (2006) Lattice accommodation of epitaxial Bi(111) films on Si(001) studied with SPA-LEED and AFM. Physical Review B, 74 (19) doi:10.1103/physrevb.74.195340
Jnawali, G., Hattab, H., Meyer zu Heringdorf, F.-J., Krenzer, B., Horn-von Hoegen, M. (2007) Lattice-matching periodic array of misfit dislocations: Heteroepitaxy of Bi(111) on Si(001) Physical Review B, 76 (3) doi:10.1103/physrevb.76.035337
Jnawali, G., Klein, C., Wagner, Th., Hattab, H., Zahl, P., Acharya, D. P., Sutter, P., Lorke, A., Horn-von Hoegen, M. (2012) Manipulation of Electronic Transport in the Bi(111) Surface State. Physical Review Letters, 108 (26). doi:10.1103/physrevlett.108.266804
Klein, C., Vollmers, N. J., Gerstmann, U., Zahl, P., Lükermann, D., Jnawali, G., Pfnür, H., Tegenkamp, C., Sutter, P., Schmidt, W. G., Horn-von Hoegen, M. (2015) Barrier-free subsurface incorporation of3dmetal atoms into Bi(111) films. Physical Review B, 91 (19) doi:10.1103/physrevb.91.195441
Hattab, H., N’Diaye, A. T., Wall, D., Jnawali, G., Coraux, J., Busse, C., van Gastel, R., Poelsema, B., Michely, T., Meyer zu Heringdorf, F.-J., Horn-von Hoegen, M. (2011) Growth temperature dependent graphene alignment on Ir(111). Applied Physics Letters, 98 (14). 141903pp. doi:10.1063/1.3548546
Meyer, D., Jnawali, G., Hattab, H., Horn-von Hoegen, M. (2019) Rapid onset of strain relief by massive generation of misfit dislocations in Bi(111)/Si(001) heteroepitaxy. Applied Physics Letters, 114 (8). 81601pp. doi:10.1063/1.5088760
Cottin, M. C., Bobisch, C. A., Schaffert, J., Jnawali, G., Sonntag, A., Bihlmayer, G., Möller, R. (2011) Anisotropic scattering of surface state electrons at a point defect on Bi(111). Applied Physics Letters, 98 (2). 22108pp. doi:10.1063/1.3536528
Horn-von Hoegen, M., Copel, M., Tsang, J. C., Reuter, M. C., Tromp, R. M. (1994) Surfactant-mediated growth of Ge on Si(111) Physical Review B, 50 (15) 10811-10822 doi:10.1103/physrevb.50.10811
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