Vote for your favorite mineral in #MinCup25! - Baryte vs. Hematite
It's a heavyweight match between industrial powerhouses as soft #baryte competes against rusty red #hematite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Caprara, S., Men’shov, V. N., Tugushev, V. V., Echenique, P. M., Chulkov, E. V. (2009) Effect of carrier confinement on exchange coupling in dilute magnetic semiconductors with self-organized nanocolumns. Physical Review B, 79 (3) doi:10.1103/physrevb.79.035202

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleEffect of carrier confinement on exchange coupling in dilute magnetic semiconductors with self-organized nanocolumns
JournalPhysical Review B
AuthorsCaprara, S.Author
Men’shov, V. N.Author
Tugushev, V. V.Author
Echenique, P. M.Author
Chulkov, E. V.Author
Year2009 (January 9)Volume79
Issue3
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.79.035202Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14202344Long-form Identifiermindat:1:5:14202344:2
GUID0
Full ReferenceCaprara, S., Men’shov, V. N., Tugushev, V. V., Echenique, P. M., Chulkov, E. V. (2009) Effect of carrier confinement on exchange coupling in dilute magnetic semiconductors with self-organized nanocolumns. Physical Review B, 79 (3) doi:10.1103/physrevb.79.035202
Plain TextCaprara, S., Men’shov, V. N., Tugushev, V. V., Echenique, P. M., Chulkov, E. V. (2009) Effect of carrier confinement on exchange coupling in dilute magnetic semiconductors with self-organized nanocolumns. Physical Review B, 79 (3) doi:10.1103/physrevb.79.035202
In(2009, January) Physical Review B Vol. 79 (3) American Physical Society (APS)

See Also

These are possibly similar items as determined by title/reference text matching only.

Men’shov, V. N., Tugushev, V. V., Echenique, P. M., Caprara, S., Chulkov, E. V. (2008) Interlayer exchange coupling in digital magnetic alloys. Physical Review B, 78 (2) doi:10.1103/physrevb.78.024438
Men’shov, V. N., Tugushev, V. V., Caprara, S., Echenique, P. M., Chulkov, E. V. (2009) Spin ordering in semiconductor heterostructures with ferromagneticδlayers. Physical Review B, 80 (3) doi:10.1103/physrevb.80.035315
Men’shov, V. N., Tugushev, V. V., Caprara, S., Chulkov, E. V. (2011) High-temperature ferromagnetism in Si:Mn alloys. Physical Review B, 83 (3) doi:10.1103/physrevb.83.035201
Men’shov, V. N., Tugushev, V. V., Caprara, S., Chulkov, E. V. (2010) Proximity-induced spin ordering at the interface between a ferromagnetic metal and a magnetic semiconductor. Physical Review B, 81 (23) doi:10.1103/physrevb.81.235212
Caprara, S., Tugushev, V. V., Echenique, P. M., Chulkov, E. V. (2012) Spin-polarized states of matter on the surface of a three-dimensional topological insulator with implanted magnetic atoms. Physical Review B, 85 (12) doi:10.1103/physrevb.85.121304
Eremeev, S. V., Men'shov, V. N., Tugushev, V. V., Echenique, P. M., Chulkov, E. V. (2013) Magnetic proximity effect at the three-dimensional topological insulator/magnetic insulator interface. Physical Review B, 88 (14) doi:10.1103/physrevb.88.144430
Men'shov, V. N., Tugushev, V. V., Eremeev, S. V., Echenique, P. M., Chulkov, E. V. (2013) Magnetic proximity effect in the three-dimensional topological insulator/ferromagnetic insulator heterostructure. Physical Review B, 88 (22) doi:10.1103/physrevb.88.224401
Tugushev, V. V., Men’shov, V. N., Nechaev, I. A., Chulkov, E. V. (2006) Superexchange coupling in iron/silicon layered structures. Physical Review B, 74 (18) doi:10.1103/physrevb.74.184423
Men’shov, V. N., Tugushev, V. V., Caprara, S. (2010) Spin-fluctuation mediated high-temperature ferromagnetism in Si:Mn dilute magnetic semiconductors. The European Physical Journal B, 77 (3). 337-343 doi:10.1140/epjb/e2010-00271-6
Caprara, S., Tugushev, V. V., Chulkov, E. V. (2011) Spin-polarized half-metallic state of a ferromagneticδlayer in a semiconductor host. Physical Review B, 84 (8) doi:10.1103/physrevb.84.085311
Caprara, S., Tugushev, V. V., Echenique, P. M., Chulkov, E. V. (2009) Half-metallic behavior of a ferromagnetic metal monolayer in a semiconducting matrix. EPL (Europhysics Letters), 85. 27006pp. doi:10.1209/0295-5075/85/27006
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 19, 2025 05:39:06
Go to top of page