Reference Type | Journal (article/letter/editorial) |
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Title | Electronic structure, phonons, and electron-phonon interaction inMo3Si |
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Journal | Physical Review B |
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Authors | Tütüncü, H. M. | Author |
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Bağcı, S. | Author |
Srivastava, G. P. | Author |
Year | 2010 (December 14) | Volume | 82 |
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Issue | 21 |
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Publisher | American Physical Society (APS) |
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DOI | doi:10.1103/physrevb.82.214510Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 14211037 | Long-form Identifier | mindat:1:5:14211037:1 |
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GUID | 0 |
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Full Reference | Tütüncü, H. M., Bağcı, S., Srivastava, G. P. (2010) Electronic structure, phonons, and electron-phonon interaction inMo3Si. Physical Review B, 82 (21) doi:10.1103/physrevb.82.214510 |
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Plain Text | Tütüncü, H. M., Bağcı, S., Srivastava, G. P. (2010) Electronic structure, phonons, and electron-phonon interaction inMo3Si. Physical Review B, 82 (21) doi:10.1103/physrevb.82.214510 |
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In | (2010, December) Physical Review B Vol. 82 (21) American Physical Society (APS) |
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