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Liu, W., Butté, R., Dussaigne, A., Grandjean, N., Deveaud, B., Jacopin, G. (2016) Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m -plane InGaN/GaN quantum wells. Physical Review B, 94 (19) doi:10.1103/physrevb.94.195411

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Reference TypeJournal (article/letter/editorial)
TitleCarrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m -plane InGaN/GaN quantum wells
JournalPhysical Review B
AuthorsLiu, W.Author
Butté, R.Author
Dussaigne, A.Author
Grandjean, N.Author
Deveaud, B.Author
Jacopin, G.Author
Year2016 (November 10)Volume94
Issue19
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.94.195411Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14243391Long-form Identifiermindat:1:5:14243391:3
GUID0
Full ReferenceLiu, W., Butté, R., Dussaigne, A., Grandjean, N., Deveaud, B., Jacopin, G. (2016) Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m -plane InGaN/GaN quantum wells. Physical Review B, 94 (19) doi:10.1103/physrevb.94.195411
Plain TextLiu, W., Butté, R., Dussaigne, A., Grandjean, N., Deveaud, B., Jacopin, G. (2016) Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m -plane InGaN/GaN quantum wells. Physical Review B, 94 (19) doi:10.1103/physrevb.94.195411
In(2016, November) Physical Review B Vol. 94 (19) American Physical Society (APS)

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Rossbach, G., Levrat, J., Jacopin, G., Shahmohammadi, M., Carlin, J.-F., Ganière, J.-D., Butté, R., Deveaud, B., Grandjean, N. (2014) High-temperature Mott transition in wide-band-gap semiconductor quantum wells. Physical Review B, 90 (20) doi:10.1103/physrevb.90.201308
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Grandjean, N., Feltin, E., Butté, R., Carlin, J.-F., Sonderegger, S., Deveaud, B., Ganière, J.-D. (2007) Growth mode induced carrier localization in InGaN/GaN quantum wells. Philosophical Magazine, 87 (13). 2067-2075 doi:10.1080/14786430701271942
Haller, C., Carlin, J.-F., Jacopin, G., Liu, W., Martin, D., Butté, R., Grandjean, N. (2018) GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells. Applied Physics Letters, 113 (11). 111106pp. doi:10.1063/1.5048010
Liu, W., Haller, C., Chen, Y., Weatherley, T., Carlin, J.-F., Jacopin, G., Butté, R., Grandjean, N. (2020) Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime. Applied Physics Letters, 116 (22) 222106pp. doi:10.1063/5.0004321
Simeonov, D., Dussaigne, A., Butté, R., Grandjean, N. (2008) Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field. Physical Review B, 77 (7) doi:10.1103/physrevb.77.075306
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