Reference Type | Journal (article/letter/editorial) |
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Title | Gate-voltage-induced switching of the Rashba spin-orbit interaction in a composition-adjusted quantum well |
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Journal | Physical Review B |
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Authors | Akera, Hiroshi | Author |
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Suzuura, Hidekatsu | Author |
Egami, Yoshiyuki | Author |
Year | 2017 (January 3) | Volume | 95 |
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Issue | 4 |
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Publisher | American Physical Society (APS) |
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DOI | doi:10.1103/physrevb.95.045301Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 14247062 | Long-form Identifier | mindat:1:5:14247062:8 |
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GUID | 0 |
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Full Reference | Akera, Hiroshi, Suzuura, Hidekatsu, Egami, Yoshiyuki (2017) Gate-voltage-induced switching of the Rashba spin-orbit interaction in a composition-adjusted quantum well. Physical Review B, 95 (4) doi:10.1103/physrevb.95.045301 |
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Plain Text | Akera, Hiroshi, Suzuura, Hidekatsu, Egami, Yoshiyuki (2017) Gate-voltage-induced switching of the Rashba spin-orbit interaction in a composition-adjusted quantum well. Physical Review B, 95 (4) doi:10.1103/physrevb.95.045301 |
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In | (2017, January) Physical Review B Vol. 95 (4) American Physical Society (APS) |
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