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ADACHI, S., OE, K. (1984) ChemInform Abstract: CHEMICAL ETCHING CHARACTERISTICS OF (001)GALLIUM ARSENIDE. Chemischer Informationsdienst, 15 (13) doi:10.1002/chin.198413010

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Reference TypeJournal (article/letter/editorial)
TitleChemInform Abstract: CHEMICAL ETCHING CHARACTERISTICS OF (001)GALLIUM ARSENIDE
JournalChemischer Informationsdienst
AuthorsADACHI, S.Author
OE, K.Author
Year1984 (March 27)Volume15
Issue13
PublisherWiley
DOIdoi:10.1002/chin.198413010Search in ResearchGate
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Mindat Ref. ID14883480Long-form Identifiermindat:1:5:14883480:6
GUID0
Full ReferenceADACHI, S., OE, K. (1984) ChemInform Abstract: CHEMICAL ETCHING CHARACTERISTICS OF (001)GALLIUM ARSENIDE. Chemischer Informationsdienst, 15 (13) doi:10.1002/chin.198413010
Plain TextADACHI, S., OE, K. (1984) ChemInform Abstract: CHEMICAL ETCHING CHARACTERISTICS OF (001)GALLIUM ARSENIDE. Chemischer Informationsdienst, 15 (13) doi:10.1002/chin.198413010
In(1984, March) Chemischer Informationsdienst Vol. 15 (13) Wiley

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ADACHI, S., NOGUCHI, Y., KAWAGUCHI, H. (1982) ChemInform Abstract: CHEMICAL ETCHING OF INDIUM GALLIUM ARSENIDE PHOSPHIDE/INDIUM PHOSPHIDE DH WAFER. Chemischer Informationsdienst, 13 (37) doi:10.1002/chin.198237350
MASU, K., NAKATSUKA, S., KONAGAI, M., TAKAHASHI, K. (1982) ChemInform Abstract: THE ROLE OF BERYLLIUM IN GALLIUM ALUMINUM ARSENIDE/GALLIUM ARSENIDE SOLAR CELLS. Chemischer Informationsdienst, 13 (45) doi:10.1002/chin.198245355
BHAT, R., GHANDHI, S. K. (1977) ChemInform Abstract: VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM ARSENIDE USING ARSENIC TRICHLORIDE. Chemischer Informationsdienst, 8 (51) doi:10.1002/chin.197751001
BHATTACHARYA, P. K., RHEE, J. K. (1984) ChemInform Abstract: SOME PROPERTIES OF SEMI-INSULATING AND SILICON-IMPLANTED GALLIUM ARSENIDE. Chemischer Informationsdienst, 15 (35) doi:10.1002/chin.198435009
BHAT, R., GHANDHI, S. K. (1978) ChemInform Abstract: THE EFFECT OF CHLORIDE ETCHING ON GALLIUM ARSENIDE EPITAXY USING TMG AND ARSINE. Chemischer Informationsdienst, 9 (34) doi:10.1002/chin.197834002
KELLY, J. J., NOTTEN, P. H. L. (1984) ChemInform Abstract: SURFACE CHARGING EFFECTS DURING PHOTOANODIC DISSOLUTION OF N-GALLIUM ARSENIDE ELECTRODES. Chemischer Informationsdienst, 15 (13) doi:10.1002/chin.198413011
SU, C.-S., GRANNEMANN, W. W. (1983) ChemInform Abstract: CURRENT-VOLTAGE CHARACTERISTICS OF METAL-GALLIUM PHOSPHATE-GALLIUM ARSENIDE CAPACITORS. Chemischer Informationsdienst, 14 (19) doi:10.1002/chin.198319013
BALIGA, B. J., GHANDHI, S. K. (1979) ChemInform Abstract: PLANAR DIFFUSION IN GALLIUM ARSENIDE FROM TIN-DOPED OXIDES. Chemischer Informationsdienst, 10 (15) doi:10.1002/chin.197915007
PHATAK, S. B., KELNER, G. (1979) ChemInform Abstract: MATERIAL-SELECTIVE CHEMICAL ETCHING IN THE SYSTEM INDIUM GALLIUM ARSENIDE PHOSPHIDE/INDIUM PHOSPHIDE (INGAASP/INP) Chemischer Informationsdienst, 10 (20) doi:10.1002/chin.197920013
KOMIYA, S., KOTANI, T. (1979) ChemInform Abstract: DIRECT OBSERVATION OF DISLOCATIONS IN GALLIUM ALUMINUM ARSENIDE (GA1-XALXAS)-GALLIUM ARSENIDE GROWN BY THE LPE METHOD. Chemischer Informationsdienst, 10 (13) doi:10.1002/chin.197913002
MATSUSHITA, K., HARIU, T., ADACHI, H., SHIBATA, Y. (1979) ChemInform Abstract: SOME ASPECTS ON THE MECHANISM OF ANODIC OXIDATION OF GALLIUM ARSENIDE. Chemischer Informationsdienst, 10 (43) doi:10.1002/chin.197943026
 
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