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WERKHOVEN, C. J., BULLE-LIEUWMA, C. W. T., LEUNISSEN, B. J. H., VIEGERS, M. P. A. (1984) ChemInform Abstract: CHARACTERIZATION OF METALLIC PRECIPITATES IN EPITAXIAL SILICON BY MEANS OF PREFERENTIAL ETCHING AND TEM. Chemischer Informationsdienst, 15 (38) doi:10.1002/chin.198438005

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Reference TypeJournal (article/letter/editorial)
TitleChemInform Abstract: CHARACTERIZATION OF METALLIC PRECIPITATES IN EPITAXIAL SILICON BY MEANS OF PREFERENTIAL ETCHING AND TEM
JournalChemischer Informationsdienst
AuthorsWERKHOVEN, C. J.Author
BULLE-LIEUWMA, C. W. T.Author
LEUNISSEN, B. J. H.Author
VIEGERS, M. P. A.Author
Year1984 (September 18)Volume15
Issue38
PublisherWiley
DOIdoi:10.1002/chin.198438005Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14893417Long-form Identifiermindat:1:5:14893417:9
GUID0
Full ReferenceWERKHOVEN, C. J., BULLE-LIEUWMA, C. W. T., LEUNISSEN, B. J. H., VIEGERS, M. P. A. (1984) ChemInform Abstract: CHARACTERIZATION OF METALLIC PRECIPITATES IN EPITAXIAL SILICON BY MEANS OF PREFERENTIAL ETCHING AND TEM. Chemischer Informationsdienst, 15 (38) doi:10.1002/chin.198438005
Plain TextWERKHOVEN, C. J., BULLE-LIEUWMA, C. W. T., LEUNISSEN, B. J. H., VIEGERS, M. P. A. (1984) ChemInform Abstract: CHARACTERIZATION OF METALLIC PRECIPITATES IN EPITAXIAL SILICON BY MEANS OF PREFERENTIAL ETCHING AND TEM. Chemischer Informationsdienst, 15 (38) doi:10.1002/chin.198438005
In(1984, September) Chemischer Informationsdienst Vol. 15 (38) Wiley

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Werkhoven, C. J. (1984) Characterization of Metallic Precipitates in Epitaxial Si by Means of Preferential Etching and TEM. Journal of the Electrochemical Society, 131. 1388pp. doi:10.1149/1.2115854
Bulle-Lieuwma, C.W.T., Viegers, M.P.A. (1984) Tem study of microdefects in epitaxially grown silicon. Ultramicroscopy, 14 (4). 394pp. doi:10.1016/0304-3991(84)90263-8
Marée, P. M. J., Olthof, R. I. J., Frenken, J. W. M., van der Veen, J. F., Bulle‐Lieuwma, C. W. T., Viegers, M. P. A., Zalm, P. C. (1985) Silicon strained layers grown on GaP(001) by molecular beam epitaxy. Journal of Applied Physics, 58 (8). 3097-3103 doi:10.1063/1.335811
Bulle-Lieuwma, C.W.T., Viegers, M.P.A. (1984) Misfit structure of MBE grown silicon on galliumphosphide by means of high resolution electron microscopy. Ultramicroscopy, 15 (4). 395pp. doi:10.1016/0304-3991(84)90166-9
Marée, P. M. J., Barbour, J. C., van der Veen, J. F., Kavanagh, K. L., Bulle‐Lieuwma, C. W. T., Viegers, M. P. A. (1987) Generation of misfit dislocations in semiconductors. Journal of Applied Physics, 62 (11). 4413-4420 doi:10.1063/1.339078
SEVERIN, P. J., BULLE, H., POODT, G., WASSCHER, J. D. (1975) ChemInform Abstract: ON THE TECHNIQUE AND EVALUATION OF ANGLE-BEVELING SILICON EPITAXIAL LAYERS. Chemischer Informationsdienst, 6 (26) doi:10.1002/chin.197526011
ARMSTRONG, W. H., SPOOL, A., PAPAEFTHYMIOU, G. C., FRANKEL, R. B., LIPPARD, S. J. (1984) ChemInform Abstract: ASSEMBLY AND CHARACTERIZATION OF AN ACCURATE MODEL FOR THE DIIRON CENTER IN HEMERYTHRIN. Chemischer Informationsdienst, 15 (38) doi:10.1002/chin.198438281
WERKHOVEN, C. (1978) ChemInform Abstract: DISCLOSURE OF DISLOCATION LOOPS AND DISLOCATION DIPOLES IN GALLIUM PHOSPHIDE BY CHEMICAL ETCHING. Chemischer Informationsdienst, 9 (31) doi:10.1002/chin.197831005
Polman, A., Mous, D. J. W., Stolk, P. A., Sinke, W. C., Bulle‐Lieuwma, C. W. T., Vandenhoudt, D. E. W. (1989) Epitaxial explosive crystallization of amorphous silicon. Applied Physics Letters, 55 (11). 1097-1099 doi:10.1063/1.101668
SMITH, W. B., HARRIS, M. C. (1984) ChemInform Abstract: PREPARATION AND CHARACTERIZATION OF SOME PENTAARYLETHYLS. Chemischer Informationsdienst, 15 (26) doi:10.1002/chin.198426131
COLLMAN, J. P., BARNES, C. E., SWEPSTON, P. N., IBERS, J. A. (1984) ChemInform Abstract: SYNTHESIS, PROTON NMR, AND STRUCTURAL CHARACTERIZATION OF BINUCLEAR RUTHENIUM PORPHYRIN DIMERS. Chemischer Informationsdienst, 15 (38) doi:10.1002/chin.198438298
 
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