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Kikuchi, Makoto, Abe, Yutaka, Chong, Pyong-un (1965) The Electric Field Enhancement (EFE) Effect in Sogicon. Japanese Journal of Applied Physics, 4 (1) 76 doi:10.1143/jjap.4.76c

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Reference TypeJournal (article/letter/editorial)
TitleThe Electric Field Enhancement (EFE) Effect in Sogicon
JournalJapanese Journal of Applied Physics
AuthorsKikuchi, MakotoAuthor
Abe, YutakaAuthor
Chong, Pyong-unAuthor
Year1965 (January)Volume4
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.4.76cSearch in ResearchGate
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Mindat Ref. ID14976105Long-form Identifiermindat:1:5:14976105:7
GUID0
Full ReferenceKikuchi, Makoto, Abe, Yutaka, Chong, Pyong-un (1965) The Electric Field Enhancement (EFE) Effect in Sogicon. Japanese Journal of Applied Physics, 4 (1) 76 doi:10.1143/jjap.4.76c
Plain TextKikuchi, Makoto, Abe, Yutaka, Chong, Pyong-un (1965) The Electric Field Enhancement (EFE) Effect in Sogicon. Japanese Journal of Applied Physics, 4 (1) 76 doi:10.1143/jjap.4.76c
In(1965, January) Japanese Journal of Applied Physics Vol. 4 (1) Japan Society of Applied Physics

See Also

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Kikuchi, Makoto, Abe, Yutaka, Chong, Pyong-un (1964) The Electric Field Enhancement (EFE) Effect in Sogicon. Japanese Journal of Applied Physics, 3 (10) 667-668 doi:10.1143/jjap.3.667
Kikuchi, Makoto, Abe, Yutaka, CHONG, Pyong-un (1963) Further Experimental Results on the SOGICON Characteristics. Japanese Journal of Applied Physics, 2 (10) 660-661 doi:10.1143/jjap.2.660
Kikuchi, Makoto, Abe, Yutaka, Chong, Pyong-un (1963) Oscillation Phenomena in High Resistivity Germanium Rod. Japanese Journal of Applied Physics, 2 (7) 440-441 doi:10.1143/jjap.2.440
Kikuchi, Makoto, Abe, Yutaka, Chong, Pyong-un (1963) Light Induced Negative Resistance in High Resistivity N-type Silicon. Japanese Journal of Applied Physics, 2 (7) 441-442 doi:10.1143/jjap.2.441
Abe, Yutaka, Hayakawa, Hisao, Kikuchi, Makoto (1965) Frequency Spectrum of Microwave Emission from GaAs. Japanese Journal of Applied Physics, 4 (12) 1020 doi:10.1143/jjap.4.1020
Hayakawa, Hisao, Kikuchi, Makoto, Abe, Yutaka (1966) Continuous Current Oscillation in GaAs Caused by Acoustoelectric Effect. Japanese Journal of Applied Physics, 5 (8) 734-735 doi:10.1143/jjap.5.734
Kikuchi, Makoto, Hayakawa, Hisao, Abe, Yutaka (1966) Acoustoelectric Current Oscillation in InSb and Its Dependence on the Transverse Magnetic Field. Japanese Journal of Applied Physics, 5 (12) 1259-1260 doi:10.1143/jjap.5.1259
Kikuchi, Makoto, Hayakawa, Hisao, Abe, Yutaka (1966) Sound Velocity Transit of High Field Domain in GaAs under Acoustoelectric Oscillation. Japanese Journal of Applied Physics, 5 (8) 735-736 doi:10.1143/jjap.5.735
Kikuchi, Makoto, Hayakawa, Hisao, Abe, Yutaka (1966) Dependence of Acoustoelectric Current Oscillation in InSb on Azimuthal Angle of Transverse Magnetic Field. Japanese Journal of Applied Physics, 5 (12) 1260-1261 doi:10.1143/jjap.5.1260
Kikuchi, Makoto, Abe, Yutaka (1962) The “Sogicon” –A New Type of Semiconductor Oscillator. Journal of the Physical Society of Japan, 17 (5). 881-882 doi:10.1143/jpsj.17.881
Kikuchi, Makoto, Abe, Yutaka (1962) Erratum: “The Sogicon – A New Type of Semiconductor Oscillator”. Journal of the Physical Society of Japan, 17 (6). 1079 doi:10.1143/jpsj.17.1079d
 
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