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Hara, Tohru, Akasaki, Isamu (1966) Silicon contamination of GaAs Crystals Grown in Glassy Carbon Boats. Japanese Journal of Applied Physics, 5 (12) 1255-1256 doi:10.1143/jjap.5.1255

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Reference TypeJournal (article/letter/editorial)
TitleSilicon contamination of GaAs Crystals Grown in Glassy Carbon Boats
JournalJapanese Journal of Applied Physics
AuthorsHara, TohruAuthor
Akasaki, IsamuAuthor
Year1966 (December)Volume5
Issue12
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.5.1255Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14976462Long-form Identifiermindat:1:5:14976462:1
GUID0
Full ReferenceHara, Tohru, Akasaki, Isamu (1966) Silicon contamination of GaAs Crystals Grown in Glassy Carbon Boats. Japanese Journal of Applied Physics, 5 (12) 1255-1256 doi:10.1143/jjap.5.1255
Plain TextHara, Tohru, Akasaki, Isamu (1966) Silicon contamination of GaAs Crystals Grown in Glassy Carbon Boats. Japanese Journal of Applied Physics, 5 (12) 1255-1256 doi:10.1143/jjap.5.1255
In(1966, December) Japanese Journal of Applied Physics Vol. 5 (12) Japan Society of Applied Physics

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Akasaki, Isamu, Hara, Tohru (1966) Erratum: “Temperature Dependence of Electron Mobility in GaAs”. Journal of the Physical Society of Japan, 21 (1). 211 doi:10.1143/jpsj.21.211b
Akasaki, Isamu, Hara, Tohru (1965) Temperature Dependence of Electron Mobility in GaAs. Journal of the Physical Society of Japan, 20 (12). 2292 doi:10.1143/jpsj.20.2292
Kuru, Isamu (1966) Current Instabilities in n-GaAs. Japanese Journal of Applied Physics, 5 (6) 486-495 doi:10.1143/jjap.5.486
Hara, Tohru, Takeda, Satoru, Mochizuki, Akira, HirokazuOikawa, , Higashisaka, Asamitsu, HideakiKohzu, (1995) Carbon Ion Implantation in GaAs. Japanese Journal of Applied Physics, 34. doi:10.1143/jjap.34.l1020
Hara, Akito (1995) Effects of Grown-in Hydrogen on Lifetime of Czochralski Silicon Crystals. Japanese Journal of Applied Physics, 34. 5483-5488 doi:10.1143/jjap.34.5483
Kobayashi, Naoki, Makimoto, Toshiki (1985) Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAs. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l824
Morohashi, Makoto, Sawaki, Nobuhiko, Akasaki, Isamu (1985) Electron Mobility and Drag Effect in p-Type Silicon. Japanese Journal of Applied Physics, 24. 732-736 doi:10.1143/jjap.24.732
Miyake, Tohru, Onuki, Masami (1966) A. C. Photoconductivity of CdS Crystals. Japanese Journal of Applied Physics, 5 (8) 745 doi:10.1143/jjap.5.745a
Miyake, Tohru, Onuki, Masami (1966) A. C. Photoconductivity of CdS Crystals. Japanese Journal of Applied Physics, 5 (6) 478-485 doi:10.1143/jjap.5.478
Goto, Hideo, Zhou, Jun, Sawaki, Nobuhiko, Akasaki, Isamu (1987) Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnSxSe1-x. Japanese Journal of Applied Physics, 26. 1300-1304 doi:10.1143/jjap.26.1300
Wataya, Mitsuo, Sawaki, Nobuhiko, Goto, Hideo, Akasaki, Isamu, Kano, Hiroyuki, Hashimoto, Masafumi (1989) Interface-Roughness Scattering in GaAs/AlxGa1-xAs Superlattices. Japanese Journal of Applied Physics, 28. 1934-1938 doi:10.1143/jjap.28.1934
 
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