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Edagawa, Hiroshi, Morita, Yoshinori, Maekawa, Shun-ichi, Inuishi, Yoshio (1966) γ Ray Irradiation on MOS Field Effect Transistor. Japanese Journal of Applied Physics, 5 (3) 256-257 doi:10.1143/jjap.5.256

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Reference TypeJournal (article/letter/editorial)
Titleγ Ray Irradiation on MOS Field Effect Transistor
JournalJapanese Journal of Applied Physics
AuthorsEdagawa, HiroshiAuthor
Morita, YoshinoriAuthor
Maekawa, Shun-ichiAuthor
Inuishi, YoshioAuthor
Year1966 (March)Volume5
Issue3
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.5.256Search in ResearchGate
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Mindat Ref. ID14976511Long-form Identifiermindat:1:5:14976511:6
GUID0
Full ReferenceEdagawa, Hiroshi, Morita, Yoshinori, Maekawa, Shun-ichi, Inuishi, Yoshio (1966) γ Ray Irradiation on MOS Field Effect Transistor. Japanese Journal of Applied Physics, 5 (3) 256-257 doi:10.1143/jjap.5.256
Plain TextEdagawa, Hiroshi, Morita, Yoshinori, Maekawa, Shun-ichi, Inuishi, Yoshio (1966) γ Ray Irradiation on MOS Field Effect Transistor. Japanese Journal of Applied Physics, 5 (3) 256-257 doi:10.1143/jjap.5.256
In(1966, March) Japanese Journal of Applied Physics Vol. 5 (3) Japan Society of Applied Physics

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Edagawa, Hiroshi, Morita, Yoshinori, Ishikawa, Hajime, Maekawa, Shun-ichi, Inuishi, Yoshio (1964) Electrical Properties of Oxidized SiP-NJunctions. Japanese Journal of Applied Physics, 3 (10) 644-660 doi:10.1143/jjap.3.644
Edagawa, Hiroshi, Morita, Yoshinori, Maekawa, Shun-ichi, Inuishi, Yoshio (1963) Growth and Structure of Si Oxide Films on Si Surface. Japanese Journal of Applied Physics, 2 (12) 765-775 doi:10.1143/jjap.2.765
Edagawa, Hiroshi, Morita, Yoshinori, Maekawa, Syun-ichi, Inuishi, Yoshio (1963) The Quantitative Evaluation ofN-Type Conversion of Thermally Oxidized Si Surface. Japanese Journal of Applied Physics, 2 (12) 814-815 doi:10.1143/jjap.2.814
Edagawa, Hiroshi, Shibaike, Tsutomu, Morita, Yoshinori, Matsumoto, Fujio, Inuishi, Yoshio (1963) Surface Field Effect on the Breakdown of Ge Grain Boundary. Japanese Journal of Applied Physics, 2 (7) 436-437 doi:10.1143/jjap.2.436
Edagawa, Hiroshi, Morita, Yoshinori, Maekawa, Syun-ichi, Inuishi, Yoshio (1961) Slow Decay of Reverse Current and Noise in Field Effect on GeP+-NJunction. Journal of the Physical Society of Japan, 16 (5). 1041-1042 doi:10.1143/jpsj.16.1041
Edagawa, Hiroshi, Ishikawa, Hajime, Morita, Yoshinori, Inuishi, Yoshio (1962) γ Ray Irradiation Effect on Thermally Oxidized Si P–N Junction. Journal of the Physical Society of Japan, 17 (9). 1521-1522 doi:10.1143/jpsj.17.1521
Edagawa, Hiroshi, Morita, Yoshinori, Maekawa, Syun-ichi, Inuishi, Yoshio (1962) N Type Conversion of Thermally Oxidized Si Surface. Journal of the Physical Society of Japan, 17 (7). 1190-1191 doi:10.1143/jpsj.17.1190
Edagawa, Hiroshi, Morita, Yoshinori, Inuishi, Yoshio (1963) Al Redistribution in Thermally Oxidized Si Surface. Journal of the Physical Society of Japan, 18 (3). 460-461 doi:10.1143/jpsj.18.460
Morisaki, Hiroshi, Inuishi, Yoshio (1966) Harmonic Generation in Microwave Emission from InSb. Japanese Journal of Applied Physics, 5 (4) 343-344 doi:10.1143/jjap.5.343
Morisaki, Hiroshi, Inuishi, Yoshio (1966) Hall Mobility and Microwave Emission in InSb Plasma. Japanese Journal of Applied Physics, 5 (7) 637 doi:10.1143/jjap.5.637
Edagawa, Hiroshi, Morita, Yoshinori, Inuishi, Yoshio (1963) Optical Absorption of Thermally Oxidized Si Oxide Film. Journal of the Physical Society of Japan, 18 (2). 314-315 doi:10.1143/jpsj.18.314
 
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