Vote for your favorite mineral in #MinCup25! - Silver vs. Baryte
Are you ready for beautiful utility as sparkling silver competes against hefty baryte?
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Yamashita, Akiyasu, Nii, Riro (1966) Trapping of High Field Domain inn-Type GaAs. Japanese Journal of Applied Physics, 5 (4) 263-268 doi:10.1143/jjap.5.263

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleTrapping of High Field Domain inn-Type GaAs
JournalJapanese Journal of Applied Physics
AuthorsYamashita, AkiyasuAuthor
Nii, RiroAuthor
Year1966 (April)Volume5
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.5.263Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14976517Long-form Identifiermindat:1:5:14976517:8
GUID0
Full ReferenceYamashita, Akiyasu, Nii, Riro (1966) Trapping of High Field Domain inn-Type GaAs. Japanese Journal of Applied Physics, 5 (4) 263-268 doi:10.1143/jjap.5.263
Plain TextYamashita, Akiyasu, Nii, Riro (1966) Trapping of High Field Domain inn-Type GaAs. Japanese Journal of Applied Physics, 5 (4) 263-268 doi:10.1143/jjap.5.263
In(1966, April) Japanese Journal of Applied Physics Vol. 5 (4) Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Yamashita, Akiyasu (1967) High Field Effects above the Gunn Threshold in n-Type GaAs. Japanese Journal of Applied Physics, 6 (8) 1011 doi:10.1143/jjap.6.1011
Yamashita, Akiyasu (1967) Space-Charge Currents in n-Type GaAs. Japanese Journal of Applied Physics, 6 (1) 117 doi:10.1143/jjap.6.117
Yamashita, Akiyasu (1968) Space-Charge-Limited Currents and the Velocity-Field Characteristic in n-Type GaAs. Japanese Journal of Applied Physics, 7 (9) 1084-1091 doi:10.1143/jjap.7.1084
Yamashita, Akiyasu, Araki, Hidemaro, Aoki, Tatsuo (1972) Differential Capacitance of GaAs-Electrolyte Contact. Japanese Journal of Applied Physics, 11 (6) 908 doi:10.1143/jjap.11.908
Yamashita, Akiyasu, Araki, Hidemaro (1971) Pre-Breakdown Phenomena of Au-GaAs Schottky Diode. Japanese Journal of Applied Physics, 10 (9) 1282-1283 doi:10.1143/jjap.10.1282
Yamashita, Akiyasu, Yamaguchi, Masao, Aoki, Tatsuo (1973) Impurity Profile Determination in Epitaxial GaAs Crystals on High-Resistivity Substrates. Japanese Journal of Applied Physics, 12 (8) 1267-1268 doi:10.1143/jjap.12.1267
Ohtomo, Motoharu (1968) Nucleation of High-Field Domains inn-GaAs. Japanese Journal of Applied Physics, 7 (11) 1368-1380 doi:10.1143/jjap.7.1368
Kikuchi, Makoto, Hayakawa, Hisao, Abe, Yutaka (1966) Sound Velocity Transit of High Field Domain in GaAs under Acoustoelectric Oscillation. Japanese Journal of Applied Physics, 5 (8) 735-736 doi:10.1143/jjap.5.735
Yamashita, Akiyasu (1987) In Situ Electrical and Optical Measurements on GaAs Epitaxial Layers during Chemical Etching. Japanese Journal of Applied Physics, 26. 1328-1333 doi:10.1143/jjap.26.1328
Yamashita, Akiyasu, Aoki, Tatsuo, Yamaguchi, Masao (1975) A Method for Determining a GaAs Epitaxial Layer Impurity Profile. Japanese Journal of Applied Physics, 14 (7) 991-998 doi:10.1143/jjap.14.991
Yamashita, Akiyasu, Osada, Yoshihiro (1986) A New Switching Effect in Semi-Insulating GaAs and Its Use for Deep Level Spectroscopy. Japanese Journal of Applied Physics, 25. 1684-1690 doi:10.1143/jjap.25.1684
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 5, 2025 22:03:52
Go to top of page