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Shiragfuji, Junji (1966) Temperature Dependence of the Photoconductive Lifetime in n-Type Gallium Arsenide. Japanese Journal of Applied Physics, 5 (6) 469-477 doi:10.1143/jjap.5.469

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Reference TypeJournal (article/letter/editorial)
TitleTemperature Dependence of the Photoconductive Lifetime in n-Type Gallium Arsenide
JournalJapanese Journal of Applied Physics
AuthorsShiragfuji, JunjiAuthor
Year1966 (June)Volume5
Issue6
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.5.469Search in ResearchGate
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Mindat Ref. ID14976571Long-form Identifiermindat:1:5:14976571:0
GUID0
Full ReferenceShiragfuji, Junji (1966) Temperature Dependence of the Photoconductive Lifetime in n-Type Gallium Arsenide. Japanese Journal of Applied Physics, 5 (6) 469-477 doi:10.1143/jjap.5.469
Plain TextShiragfuji, Junji (1966) Temperature Dependence of the Photoconductive Lifetime in n-Type Gallium Arsenide. Japanese Journal of Applied Physics, 5 (6) 469-477 doi:10.1143/jjap.5.469
In(1966, June) Japanese Journal of Applied Physics Vol. 5 (6) Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Shiragfuji, Junji (1967) Temperature Dependence of the Photoconductive Lifetime in n-Type Gallium Arsenide. Japanese Journal of Applied Physics, 6 (2) 282 doi:10.1143/jjap.6.282a
Shirafuji, Junji (1968) Temperature Dependence of the Photoconductive Lifetime in N-Type Gallium Arsenide Diffused with Copper. Japanese Journal of Applied Physics, 7 (9) 1074-1077 doi:10.1143/jjap.7.1074
Inoue, Masataka, Nakade, Yoshiharu, Shirafuji, Junji, Inuishi, Yoshio (1971) Temperature Dependence of the Velocity Field Characteristics of n-Type Gallium Arsenide. Japanese Journal of Applied Physics, 10 (6) 818-819 doi:10.1143/jjap.10.818
Nakano, Takao, Oku, Taiji (1967) Temperature Dependence of Recombination Lifetime in Gallium Arsenide Electroluminescent Diodes. Japanese Journal of Applied Physics, 6 (10) 1212-1221 doi:10.1143/jjap.6.1212
Inoue, Masataka, Shirafuji, Junji, Inuishi, Yoshio (1971) Microwave Measurement of the Velocity-Field Characteristics in n-Type Gallium Arsenide. Japanese Journal of Applied Physics, 10 (10) 1378-1387 doi:10.1143/jjap.10.1378
Aoki, Tatsuo, Yamaguchi, Masao (1972) Dependence of the Properties of Epitaxial Gallium Arsenide on the Temperature of AsCl3. Japanese Journal of Applied Physics, 11 (12) 1775-1782 doi:10.1143/jjap.11.1775
Furukawa, Yoshitaka (1967) Trap Levels in Gallium Arsenide. Japanese Journal of Applied Physics, 6 (6) 675-679 doi:10.1143/jjap.6.675
Jeong, Manu, Shirafuji, Junji, Inuishi, Yoshio (1973) Photoluminescence Studies in Irradiated Si-Doped Gallium Arsenide. Japanese Journal of Applied Physics, 12 (1) 109-119 doi:10.1143/jjap.12.109
Mimura, Hidenori, Hatanaka, Yoshinori (1985) Electrical Properties of p-Type Hydrogenated Amorphous Silicon-n-Type Crystalline Gallium Arsenide Heterojunctions. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l355
Kurata, Kazuhiro, Shirafuji, Junji, Endo, Takao (1963) Growth of Gallium Arsenide Single Crystals by Free Surface Method. Japanese Journal of Applied Physics, 2 (1) 64-65 doi:10.1143/jjap.2.64
Aoki, Tatsuo, Yamaguchi, Masao (1971) AsCl3Flow-Rate Dependence on Properties of Epitaxially Grown Gallium Arsenide. Japanese Journal of Applied Physics, 10 (7) 953 doi:10.1143/jjap.10.953
 
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