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Susaki, Wataru (1966) Optical Gain and Losses of Solution-Grown Diffused GaAs Injection Lasers. Japanese Journal of Applied Physics, 5 (9) 845-846 doi:10.1143/jjap.5.845

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Reference TypeJournal (article/letter/editorial)
TitleOptical Gain and Losses of Solution-Grown Diffused GaAs Injection Lasers
JournalJapanese Journal of Applied Physics
AuthorsSusaki, WataruAuthor
Year1966 (September)Volume5
Issue9
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.5.845Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14976661Long-form Identifiermindat:1:5:14976661:8
GUID0
Full ReferenceSusaki, Wataru (1966) Optical Gain and Losses of Solution-Grown Diffused GaAs Injection Lasers. Japanese Journal of Applied Physics, 5 (9) 845-846 doi:10.1143/jjap.5.845
Plain TextSusaki, Wataru (1966) Optical Gain and Losses of Solution-Grown Diffused GaAs Injection Lasers. Japanese Journal of Applied Physics, 5 (9) 845-846 doi:10.1143/jjap.5.845
In(1966, September) Japanese Journal of Applied Physics Vol. 5 (9) Japan Society of Applied Physics

See Also

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Oomura, Etsuji, Susaki, Wataru, Ikeda, Kenji, Ishii, Makoto (1978) Gain Spectra in Single Mode Oscillating (AlGa)As TJS Lasers. Japanese Journal of Applied Physics, 17 (5) 953-954 doi:10.1143/jjap.17.953
Susaki, Wataru (1966) Spontaneous and Stimulated Emission in Indium Phosphide Diodes. Japanese Journal of Applied Physics, 5 (4) 334 doi:10.1143/jjap.5.334
Furukawa, Yoshitaka, Aoki, Tatsuo (1966) Leakage Current in Zinc-Diffused GaAs Diodes. Japanese Journal of Applied Physics, 5 (5) 362-368 doi:10.1143/jjap.5.362
Susaki, Wataru (1967) Current Dependence of Junction Temperature in C-W Operated GaAs Laser Diodes. Japanese Journal of Applied Physics, 6 (8) 977-981 doi:10.1143/jjap.6.977
Ohsawa, Jun, Ikeda, Kenji, Takahashi, Kazuhisa, Susaki, Wataru (1982) Effects of Arsenic Pressure on GaAs Heat-Treated in Hydrogen. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l49
Ohsawa, Jun, Ishii, Makoto, Ikeda, Kenji, Hirano, Ryoichi, Susaki, Wataru (1980) Mirror Coating of AlGaAs TJS Lasers by an Si/SiO2Reflector. Japanese Journal of Applied Physics, 19 (10) 2025-2026 doi:10.1143/jjap.19.2025
Nishimura, Yoshio (1974) Electron Scattering Times in GaAs Injection Lasers. Japanese Journal of Applied Physics, 13 (1) 109-117 doi:10.1143/jjap.13.109
Pilkuhn, M. H., Rupprecht, H. (1967) Optical and Electrical Properties of Epitaxial and Diffused GaAs Injection Lasers. Journal of Applied Physics, 38 (1). 5-10 doi:10.1063/1.1709010
Namizaki, Hirohumi, Kan, Hirohumi, Ishii, Makoto, Ito, Akiko, Susaki, textscWataru (1974) Characteristics of the Junction-Stripe-Geometry GaAs-GaAlAs Double-Heterostructure Lasers. Japanese Journal of Applied Physics, 13 (10) 1618-1623 doi:10.1143/jjap.13.1618
Ogasawara, Nagaatsu, Ito, Ryoichi (1988) Longitudinal Mode Competition and Asymmetric Gain Saturation in Semiconductor Injection Lasers. I. Experiment. Japanese Journal of Applied Physics, 27. 607-614 doi:10.1143/jjap.27.607
Ogasawara, Nagaatsu, Ito, Ryoichi (1988) Longitudinal Mode Competition and Asymmetric Gain Saturation in Semiconductor Injection Lasers. II. Theory. Japanese Journal of Applied Physics, 27. 615-626 doi:10.1143/jjap.27.615
 
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