Furukawa, Yoshitaka (1967) Epitaxial Growth of Gallium Arsenide by Using Silicon Tetrachloride. Japanese Journal of Applied Physics, 6 (11) 1344 doi:10.1143/jjap.6.1344
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Epitaxial Growth of Gallium Arsenide by Using Silicon Tetrachloride | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Furukawa, Yoshitaka | Author | |
| Year | 1967 (November) | Volume | 6 |
| Issue | 11 | ||
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.1143/jjap.6.1344Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 14976741 | Long-form Identifier | mindat:1:5:14976741:7 |
| GUID | 0 | ||
| Full Reference | Furukawa, Yoshitaka (1967) Epitaxial Growth of Gallium Arsenide by Using Silicon Tetrachloride. Japanese Journal of Applied Physics, 6 (11) 1344 doi:10.1143/jjap.6.1344 | ||
| Plain Text | Furukawa, Yoshitaka (1967) Epitaxial Growth of Gallium Arsenide by Using Silicon Tetrachloride. Japanese Journal of Applied Physics, 6 (11) 1344 doi:10.1143/jjap.6.1344 | ||
| In | (1967, November) Japanese Journal of Applied Physics Vol. 6 (11) Japan Society of Applied Physics | ||
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