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Daikoku, Kazuhiko, Mizushima, Yoshihiko (1967) Breakdown Characteristics of Germanium Bonded Diode and Its Microwave Oscillation. Japanese Journal of Applied Physics, 6 (3) 416-417 doi:10.1143/jjap.6.416

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Reference TypeJournal (article/letter/editorial)
TitleBreakdown Characteristics of Germanium Bonded Diode and Its Microwave Oscillation
JournalJapanese Journal of Applied Physics
AuthorsDaikoku, KazuhikoAuthor
Mizushima, YoshihikoAuthor
Year1967 (March)Volume6
Issue3
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.6.416Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14976838Long-form Identifiermindat:1:5:14976838:4
GUID0
Full ReferenceDaikoku, Kazuhiko, Mizushima, Yoshihiko (1967) Breakdown Characteristics of Germanium Bonded Diode and Its Microwave Oscillation. Japanese Journal of Applied Physics, 6 (3) 416-417 doi:10.1143/jjap.6.416
Plain TextDaikoku, Kazuhiko, Mizushima, Yoshihiko (1967) Breakdown Characteristics of Germanium Bonded Diode and Its Microwave Oscillation. Japanese Journal of Applied Physics, 6 (3) 416-417 doi:10.1143/jjap.6.416
In(1967, March) Japanese Journal of Applied Physics Vol. 6 (3) Japan Society of Applied Physics

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Daikoku, Kazuhiro, Mizushima, Yoshihiko (1974) New Instability Concept in Avalanche Diode Oscillation. Japanese Journal of Applied Physics, 13 (6) 989-994 doi:10.1143/jjap.13.989
Daikoku, Kazuhiro, Mizushima, Yoshihiko, Tamama, Teruo (1975) Computer Experiments on New Lattice Solitons Propagating in Volterra's System. Japanese Journal of Applied Physics, 14 (3) 367-376 doi:10.1143/jjap.14.367
Niimi, Tatsuya, Kuwano, Hiroshi (1967) A Silicon Space Charge Limited Diode. Japanese Journal of Applied Physics, 6 (3) 417-418 doi:10.1143/jjap.6.417
Murase, Katsumi, Takeda, Akitsu, Mizushima, Yoshihiko (1982) Silicon-Germanium-Boron Ternary Amorphous Alloy. Japanese Journal of Applied Physics, 21. 561-566 doi:10.1143/jjap.21.561
Matsushima, Iwao (1967) Plastic Deformation of Point Contact Germanium Diode. Japanese Journal of Applied Physics, 6 (9) 1033-1037 doi:10.1143/jjap.6.1033
Murase, Katsumi, Ogino, Toshio, Mizushima, Yoshihiko (1983) Thermal Oxidation of Amorphous Silicon-Germanium-Boron Alloy. Japanese Journal of Applied Physics, 22. 1771-1777 doi:10.1143/jjap.22.1771
Chino, Ken-ichi, Mizushima, Yoshihiko (1974) Behavior of the Schottky-Barrier Diode under Uniaxial Stress. Japanese Journal of Applied Physics, 13 (1) 156-163 doi:10.1143/jjap.13.156
Hirohata, Toru, Suzuki, Tomoko, Nakajima, Kazutoshi, Mizushima, Yoshihiko (1993) Infrared Photoresponse in Semi-Insulating GaAs Diode. Japanese Journal of Applied Physics, 32. 4550-4554 doi:10.1143/jjap.32.4550
Kawarada, Kuniyasu, Mizushima, Yoshihiko (1971) Properties of a New Avalanche Diode Oscillator Computed by a Large-Signal, Self-Consistent Simulation. Japanese Journal of Applied Physics, 10 (3) 310-319 doi:10.1143/jjap.10.310
Kawarada, Kuniyasu, Mizushima, Yoshihiko (1973) Large-Signal Analysis on Negative-Resistance Diode Due to Punch-Through-Injection and Transit-Time Effect. Japanese Journal of Applied Physics, 12 (3) 423-433 doi:10.1143/jjap.12.423
Murase, Katsumi, Amemiya, Yoshihito, Mizushima, Yoshihiko (1982) Amorphous Silicon-Germanium-Boron Alloy Applied to Low-Loss and High-Speed Diodes. Japanese Journal of Applied Physics, 21. 1559-1565 doi:10.1143/jjap.21.1559
 
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