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Kinoshita, Akira, Nakano, Tomoyasu (1967) Cu2O Crystal Growth by Hydrothermal Technique. Japanese Journal of Applied Physics, 6 (5) 656-657 doi:10.1143/jjap.6.656

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Reference TypeJournal (article/letter/editorial)
TitleCu2O Crystal Growth by Hydrothermal Technique
JournalJapanese Journal of Applied Physics
AuthorsKinoshita, AkiraAuthor
Nakano, TomoyasuAuthor
Year1967 (May)Volume6
Issue5
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.6.656Search in ResearchGate
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Mindat Ref. ID14976898Long-form Identifiermindat:1:5:14976898:8
GUID0
Full ReferenceKinoshita, Akira, Nakano, Tomoyasu (1967) Cu2O Crystal Growth by Hydrothermal Technique. Japanese Journal of Applied Physics, 6 (5) 656-657 doi:10.1143/jjap.6.656
Plain TextKinoshita, Akira, Nakano, Tomoyasu (1967) Cu2O Crystal Growth by Hydrothermal Technique. Japanese Journal of Applied Physics, 6 (5) 656-657 doi:10.1143/jjap.6.656
In(1967, May) Japanese Journal of Applied Physics Vol. 6 (5) Japan Society of Applied Physics

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Nakano, Tomoyasu, Ohtani, Kazumasa, Kinoshita, Akira, Okuda, Tuneo (1964) Growth of Cuprous Oxide (Cu2O) Crystal. Japanese Journal of Applied Physics, 3 (2) 124 doi:10.1143/jjap.3.124
Kinoshita, Akira, Nakano, Tomoyasu (1966) Production of Cuprous Oxide Single Crystal by Melt. Japanese Journal of Applied Physics, 5 (11) 1121 doi:10.1143/jjap.5.1121
Kinoshita, Akira, Nakano, Tomoyasu, Aono, Tomoyoshi (1980) Thermal Crystallization of Amorphous Se Film. Japanese Journal of Applied Physics, 19 (12) 2361-2366 doi:10.1143/jjap.19.2361
Kinoshita, Akira, Aono, Tomoyoshi, Nakano, Tomoyasu (1970) Experiment on Memory Diode in Amorphous Semiconductor. Japanese Journal of Applied Physics, 9 (4) 411 doi:10.1143/jjap.9.411
Nemoto, Tomihiro, Nakano, Tomoyasu (1967) The Effect of Silicon on Cuprous Oxide. Japanese Journal of Applied Physics, 6 (4) 543-544 doi:10.1143/jjap.6.543
Nagaoka, Akira, Yoshino, Kenji, Taniguchi, Hiroki, Taniyama, Tomoyasu, Miyake, Hideto (2011) Growth of Cu$_{2}$ZnSnS$_{4}$ Single Crystal by Traveling Heater Method. Japanese Journal of Applied Physics, 50. 128001 doi:10.1143/jjap.50.128001
Nakano, Takao (1967) Preparation and Properties of GaAs-Si Heterojunctions by Solution Growth Method. Japanese Journal of Applied Physics, 6 (7) 854-863 doi:10.1143/jjap.6.854
Hayashi, Takeshi, Nakano, Tomoyasu (1966) Tunnel Emission from Al-Al2O3-Metal Structures. Japanese Journal of Applied Physics, 5 (10) 982-983 doi:10.1143/jjap.5.982
Takahashi, Tadashi, Ebina, Atsuko, Kamiyama, Akira (1966) Vapor Reaction Growth of ZnO Single Crystal. Japanese Journal of Applied Physics, 5 (6) 560-561 doi:10.1143/jjap.5.560
Nagaoka, Akira, Yoshino, Kenji, Taniguchi, Hiroki, Taniyama, Tomoyasu, Miyake, Hideto (2011) Growth of Cu2ZnSnS4Single Crystal by Traveling Heater Method. Japanese Journal of Applied Physics, 50 (12) 128001 doi:10.7567/jjap.50.128001
Koizumi, Haruhiko, Sato, Shuichi, Kawaji, Shinji (1967) Effects of Light and Temperature on the Growth of Silicon Stain Films. Japanese Journal of Applied Physics, 6 (5) 657-658 doi:10.1143/jjap.6.657
 
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