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Arizumi, Tetsuya, Yoshida, Akira, Suzuki, Hideaki (1969) High Reverse Currents of GaSb and GaAs Tunnel Diodes. Japanese Journal of Applied Physics, 8 (2) 214-217 doi:10.1143/jjap.8.214

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Reference TypeJournal (article/letter/editorial)
TitleHigh Reverse Currents of GaSb and GaAs Tunnel Diodes
JournalJapanese Journal of Applied Physics
AuthorsArizumi, TetsuyaAuthor
Yoshida, AkiraAuthor
Suzuki, HideakiAuthor
Year1969 (February)Volume8
Issue2
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.8.214Search in ResearchGate
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Mindat Ref. ID14977526Long-form Identifiermindat:1:5:14977526:9
GUID0
Full ReferenceArizumi, Tetsuya, Yoshida, Akira, Suzuki, Hideaki (1969) High Reverse Currents of GaSb and GaAs Tunnel Diodes. Japanese Journal of Applied Physics, 8 (2) 214-217 doi:10.1143/jjap.8.214
Plain TextArizumi, Tetsuya, Yoshida, Akira, Suzuki, Hideaki (1969) High Reverse Currents of GaSb and GaAs Tunnel Diodes. Japanese Journal of Applied Physics, 8 (2) 214-217 doi:10.1143/jjap.8.214
In(1969, February) Japanese Journal of Applied Physics Vol. 8 (2) Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Arizumi, Tetsuya, Yoshida, Akira (1968) Barrier Capacitance and Built-in Voltage of Tunnel Diodes. Japanese Journal of Applied Physics, 7 (7) 748-750 doi:10.1143/jjap.7.748
Arizumi, Tetsuya, Wada, Takao, Yoshida, Akira (1965) Anomalous Junction Capacitance in Tunnel-Diodes. Japanese Journal of Applied Physics, 4 (6) 415-427 doi:10.1143/jjap.4.415
Sawaki, Nobuhiko, Yoshida, Akira, Arizumi, Tetsuya (1970) Uniaxial Stress Effect on Subsidiary Band Minima of GaSb from Zero Bias Conductance Anomaly. Japanese Journal of Applied Physics, 9 (8) 922-925 doi:10.1143/jjap.9.922
Arizumi, Tetsuya, Yoshida, Akira, Sawaki, Nobuhiko (1969) Uniaxial Stress Effect on (000) and (100) Conduction-Band Minima of Germanium. Japanese Journal of Applied Physics, 8 (6) 700-703 doi:10.1143/jjap.8.700
Ido, Toshiyuki, Yoshida, Akira, Arizumi, Tetsuya (1972) Transport Mechanism of Alloyedp+-nHeterojunctions with Relatively Heavy Doping. Japanese Journal of Applied Physics, 11 (2) 213-220 doi:10.1143/jjap.11.213
Shimakawa, Koichi, Yoshida, Akira, Arizumi, Tetsuya (1974) Electrothermal Effects in Chalcogenide Glass Semiconductors. Japanese Journal of Applied Physics, 13 (3) 495-499 doi:10.1143/jjap.13.495
Adachi, Yoshio, Yoshida, Akira, Arizumi, Tetsuya (1970) Intervalley Transfer in Uniaxially Strainedn-Type Ge. Japanese Journal of Applied Physics, 9 (11) 1330-1333 doi:10.1143/jjap.9.1330
Kato, Hisao, Yoshida, Akira, Arizumi, Tetsuya (1976) A Simple Fabrication Method of SnO2–Si Solar Cell. Japanese Journal of Applied Physics, 15 (9) 1819-1820 doi:10.1143/jjap.15.1819
Ido, Toshiyuki, Yoshida, Akira, Arizumi, Tetsuya (1972) Uniaxial Stress Effect onp+-nSi-Ge Alloyed Heterojunction Characteristics. Japanese Journal of Applied Physics, 11 (10) 1480-1483 doi:10.1143/jjap.11.1480
Mizutani, Teruyoshi, Shimakawa, Koichi, Arizumi, Tetsuya (1970) ESR Study on Surface Properties of Semiconductor. II. III–V Compounds (GaAs, GaSb and InSb) Japanese Journal of Applied Physics, 9 (12) 1478-1483 doi:10.1143/jjap.9.1478
Arizumi, Tetsuya, Yoshida, Akira, Oozone, Takashi (1967) Uniaxial Stress Effect on the (000) Valley of As-Doped Ge. Japanese Journal of Applied Physics, 6 (5) 589-592 doi:10.1143/jjap.6.589
 
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