Nagasima, Naoyuki (1970) Structure Analysis of Thermal Oxide Films of Silicon by Electron Diffraction and Infrared Absorption. Japanese Journal of Applied Physics, 9 (8) 879-888 doi:10.1143/jjap.9.879
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Structure Analysis of Thermal Oxide Films of Silicon by Electron Diffraction and Infrared Absorption | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Nagasima, Naoyuki | Author | |
| Year | 1970 (August) | Volume | 9 |
| Issue | 8 | ||
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.1143/jjap.9.879Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 14978075 | Long-form Identifier | mindat:1:5:14978075:1 |
| GUID | 0 | ||
| Full Reference | Nagasima, Naoyuki (1970) Structure Analysis of Thermal Oxide Films of Silicon by Electron Diffraction and Infrared Absorption. Japanese Journal of Applied Physics, 9 (8) 879-888 doi:10.1143/jjap.9.879 | ||
| Plain Text | Nagasima, Naoyuki (1970) Structure Analysis of Thermal Oxide Films of Silicon by Electron Diffraction and Infrared Absorption. Japanese Journal of Applied Physics, 9 (8) 879-888 doi:10.1143/jjap.9.879 | ||
| In | (1970, August) Japanese Journal of Applied Physics Vol. 9 (8) Japan Society of Applied Physics | ||
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