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Hokari, Yasuaki, Shiraki, Hiromitsu (1977) Video Defects in Charge-Coupled Image Sensors. Japanese Journal of Applied Physics, 16 (4) 585-590 doi:10.1143/jjap.16.585

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Reference TypeJournal (article/letter/editorial)
TitleVideo Defects in Charge-Coupled Image Sensors
JournalJapanese Journal of Applied Physics
AuthorsHokari, YasuakiAuthor
Shiraki, HiromitsuAuthor
Year1977 (April)Volume16
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.16.585Search in ResearchGate
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Mindat Ref. ID14981911Long-form Identifiermindat:1:5:14981911:6
GUID0
Full ReferenceHokari, Yasuaki, Shiraki, Hiromitsu (1977) Video Defects in Charge-Coupled Image Sensors. Japanese Journal of Applied Physics, 16 (4) 585-590 doi:10.1143/jjap.16.585
Plain TextHokari, Yasuaki, Shiraki, Hiromitsu (1977) Video Defects in Charge-Coupled Image Sensors. Japanese Journal of Applied Physics, 16 (4) 585-590 doi:10.1143/jjap.16.585
In(1977, April) Japanese Journal of Applied Physics Vol. 16 (4) Japan Society of Applied Physics

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Hokari, Yasuaki, Shiraki, Hiromitsu (1977) Secondary Defect Generation Suppression in Heavily Boron Implanted Silicon Wafers by HCl Oxidation. Japanese Journal of Applied Physics, 16 (11) 1899-1905 doi:10.1143/jjap.16.1899
Tanigawa, Hiroshi, Ishihara, Yasuo, Hokari, Yasuaki, Ishihara, Tsutomu, Aizawa, Takashi, Shiraki, Hiromitsu (1976) 228 by 248 Cell Charge-Coupled Image Sensor with Two-Level Overlapping Poly-Silicon Electrodes. Japanese Journal of Applied Physics, 15. 241 doi:10.7567/jjaps.15s1.241
Shiraki, Hiromitsu (1974) Image Damages Due to the Lattice Defects in the Silicon-Vidicon-Type Camera Tubes. Japanese Journal of Applied Physics, 13 (11) 1859-1865 doi:10.1143/jjap.13.1859
Shiraki, Hiromitsu, Matsui, Junji, Kawamura, Tsutomu, Hanaoka, Masafumi, Sasaki, Tokuo (1971) Bright Spots in the Image of Silicon Vidicon. Japanese Journal of Applied Physics, 10 (2) 213-217 doi:10.1143/jjap.10.213
Shiraki, Hiromitsu (1974) Silicon Wafer Annealing Effect in Loop Defect Generation. Japanese Journal of Applied Physics, 13 (10) 1514-1523 doi:10.1143/jjap.13.1514
Shiraki, Hiromitsu (1969) Dislocation Etch Pits on Solution Grown Gallium Phosphide. Japanese Journal of Applied Physics, 8 (2) 279 doi:10.1143/jjap.8.279
Baba, Takaaki, Sasaki, Reiichi (1977) Observation of Thermally Generated Carrier in Charge Coupled Devices. Japanese Journal of Applied Physics, 16 (8) 1369-1378 doi:10.1143/jjap.16.1369
Matsui, Junji, Shiraki, Hiromitsu (1976) Crossed-Grid Dislocations in (001)-Oriented Silicon Crystals. Japanese Journal of Applied Physics, 15 (1) 73-82 doi:10.1143/jjap.15.73
Shiraki, Hiromitsu (1975) Reduction of Silicon Vidicon Dark Current by HCI Oxidation. Japanese Journal of Applied Physics, 14 (12) 1969-1973 doi:10.1143/jjap.14.1969
Hokari, Yasuaki (1979) Secondary Defect Generation Suppression and Diffusivity Restraint in Heavily Phosphorus Implanted Silicon by HCI Oxidation. Japanese Journal of Applied Physics, 18 (5) 873-880 doi:10.1143/jjap.18.873
Shiraki, Hiromitsu (1965) Relations between the Electrical Resistance of Potassium-Antimonide (K-Sb) and Its Chemical Composition. Japanese Journal of Applied Physics, 4 (3) 238-239 doi:10.1143/jjap.4.238
 
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