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Yokota, Katsuhiro, Tamura, Susumu, Gamo, Kenji, Namba, Susumu, Masuda, Kohzoh, Ishihara, Shinji, Kimura, Itsuro (1978) Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO2and Si3N4. Japanese Journal of Applied Physics, 17 (10) 1881-1882 doi:10.1143/jjap.17.1881

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Reference TypeJournal (article/letter/editorial)
TitleIon-Implanted Arsenic Profiles in GaAs Encapsulated by SiO2and Si3N4
JournalJapanese Journal of Applied Physics
AuthorsYokota, KatsuhiroAuthor
Tamura, SusumuAuthor
Gamo, KenjiAuthor
Namba, SusumuAuthor
Masuda, KohzohAuthor
Ishihara, ShinjiAuthor
Kimura, ItsuroAuthor
Year1978 (October)Volume17
Issue10
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.17.1881Search in ResearchGate
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Mindat Ref. ID14982457Long-form Identifiermindat:1:5:14982457:8
GUID0
Full ReferenceYokota, Katsuhiro, Tamura, Susumu, Gamo, Kenji, Namba, Susumu, Masuda, Kohzoh, Ishihara, Shinji, Kimura, Itsuro (1978) Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO2and Si3N4. Japanese Journal of Applied Physics, 17 (10) 1881-1882 doi:10.1143/jjap.17.1881
Plain TextYokota, Katsuhiro, Tamura, Susumu, Gamo, Kenji, Namba, Susumu, Masuda, Kohzoh, Ishihara, Shinji, Kimura, Itsuro (1978) Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO2and Si3N4. Japanese Journal of Applied Physics, 17 (10) 1881-1882 doi:10.1143/jjap.17.1881
In(1978, October) Japanese Journal of Applied Physics Vol. 17 (10) Japan Society of Applied Physics

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Iwaki, Masaya, Gamo, Kenji, Masuda, Kohzoh, Namba, Susumu, Ishihara, Shinji, Kimura, Itsuro, Yokota, Katsuhiro (1975) Comparison between Concentration Profiles of Arsenic Implanted in Silicon Measured by Means of Neutron Activation Analysis and Radioactive Ion Implantation. Japanese Journal of Applied Physics, 14 (1) 167-168 doi:10.1143/jjap.14.167
Gamo, Kenji, Iwaki, Masaya, Masuda, Kohzoh, Namba, Susumu, Ishihara, Shinji, Kimura, Itsuro (1971) Concentration Profiles of Room Temperature Ion Implanted Indium in Silicon. Japanese Journal of Applied Physics, 10 (4) 523-525 doi:10.1143/jjap.10.523
Gamo, Kenji, Doi, Atsutoshi, Masuda, Kohzoh, Namba, Susumu, Ishihara, Shinji, Kimura, Itsuro (1970) Enhanced Diffusion of Ion Implanted Sb in Silicon. Japanese Journal of Applied Physics, 9 (3) 333-334 doi:10.1143/jjap.9.333
Gamo, Kenji, Masuda, Kohzoh, Namba, Susumu, Ishihara, Shinji, Kimura, Itsuro (1970) ENHANCED DIFFUSION OF HIGH‐TEMPERATURE ION‐IMPLANTED ANTIMONY INTO SILICON. Applied Physics Letters, 17 (9). 391-393 doi:10.1063/1.1653449
Yokota, Katsuhiro, Muta, Kenji, Kimura, Masatoshi, Tamura, Susumu, Ishihara, Shinji, Kimura, Itsuro (1987) Halogen and Mercury Lamp Annealing of Arsenic Implanted into Silicon. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l87
Yokota, Katsuhiro, Tamura, Susumu, Ishihara, Shinji, Kimura, Itsuro (1985) Annealing Behavior of Arsenic and Gallium Implanted in Silicon with Thin Native-Oxide Films. Japanese Journal of Applied Physics, 24. 62-67 doi:10.1143/jjap.24.62
Gamo, Kenji, Aoki, Kazunori, Masuda, Kohzoh, Namba, Susumu (1971) Diffusion of Defects in Low Temperature Ion Implanted GaAs. Japanese Journal of Applied Physics, 10 (8) 1118-1119 doi:10.1143/jjap.10.1118
Gamo, Kenji, Iwaki, Masaya, Masuda, Kohzoh, Namba, Susumu, Ishihara, Shinji, Kimura, Itsuro, Mitchell, Ian V., Ilic, Gradimir, Whitton, James L., Davies, John A. (1973) Enhanced Diffusion and Lattice Location of Indium and Gallium Implanted in Silicon. Japanese Journal of Applied Physics, 12 (5) 735-741 doi:10.1143/jjap.12.735
Gamo, Kenji, Masuda, Kohzoh, Namba, Susumu, Ilic, Gradimir (1972) Lattice Location of Sb Implanted in GaAs Single Crystals. Japanese Journal of Applied Physics, 11 (10) 1577-1578 doi:10.1143/jjap.11.1577
Aoki, Kazunori, Gamo, Kenji, Masuda, Kohzoh, Namba, Susumu (1976) Depth Distribution of Defects in Mg-Ion and Cd-Ion Implanted GaAs. Japanese Journal of Applied Physics, 15 (2) 405-406 doi:10.1143/jjap.15.405
Lin, Miin-Shyong, Gamo, Kenji, Masuda, Kohzoh, Namba, Susumu (1973) Dose Dependence of Photoluminescence Degradation in Te Ion-Implanted GaAs. Japanese Journal of Applied Physics, 12 (7) 1092-1093 doi:10.1143/jjap.12.1092
 
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