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Minato, Osamu, Sakai, Yoshio, Masuhara, Toshiaki, Sasaki, Toshio (1980) Buried J-FET Powered Static RAM Cell. Japanese Journal of Applied Physics, 19. 213 doi:10.7567/jjaps.19s1.213

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Reference TypeJournal (article/letter/editorial)
TitleBuried J-FET Powered Static RAM Cell
JournalJapanese Journal of Applied Physics
AuthorsMinato, OsamuAuthor
Sakai, YoshioAuthor
Masuhara, ToshiakiAuthor
Sasaki, ToshioAuthor
Year1980 (January 1)Volume19
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjaps.19s1.213Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14983430Long-form Identifiermindat:1:5:14983430:0
GUID0
Full ReferenceMinato, Osamu, Sakai, Yoshio, Masuhara, Toshiaki, Sasaki, Toshio (1980) Buried J-FET Powered Static RAM Cell. Japanese Journal of Applied Physics, 19. 213 doi:10.7567/jjaps.19s1.213
Plain TextMinato, Osamu, Sakai, Yoshio, Masuhara, Toshiaki, Sasaki, Toshio (1980) Buried J-FET Powered Static RAM Cell. Japanese Journal of Applied Physics, 19. 213 doi:10.7567/jjaps.19s1.213
In(1980) Japanese Journal of Applied Physics Vol. 19. Japan Society of Applied Physics

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Sakai, Yoshio, Masuhara, Toshiaki, Minato, Osamu, Hashimoto, Norikazu (1979) High Packing Density, High Speed CMOS (Hi-CMOS) Device Technology. Japanese Journal of Applied Physics, 18. 73 doi:10.7567/jjaps.18s1.73
Minato, Osamu, Sasaki, Toshio, Hori, Ryoichi, Kubo, Masaharu, Hashimoto, Norikazu, Yoshimura, Hisanori (1978) High Performance 4k Dynamic RAM Fabricated with Short Channel MOS Technology. Japanese Journal of Applied Physics, 17. 65 doi:10.7567/jjaps.17s1.65
Lehovec, Kurt (1980) VLSI GaAs Tunnel Diode-FET Logic and Memory Cell. Japanese Journal of Applied Physics, 19. 335 doi:10.7567/jjaps.19s1.335
Tobe, Miharu, Sakai, Shiro, Umeno, Masayoshi, Amemiya, Yoshifumi (1980) New Wavelength-Demultiplexing InGaAsP/InP Photodiodes. Japanese Journal of Applied Physics, 19. 213 doi:10.7567/jjaps.19s2.213
Saito, Shozo, Uchida, Yukimasa, Endo, Norio (1980) N-Channel High Speed Nonvolatile Static RAM Utilizing MNOS Capasitors. Japanese Journal of Applied Physics, 19. 225 doi:10.7567/jjaps.19s1.225
Ayabe, Masaaki, Matsuda, Osamu, Dosen, Masashi, Santa, Sumio, Watanabe, Naozo (1980) An Improved Etched Buried Heterostructure Laser with Reduced Threshold Current. Japanese Journal of Applied Physics, 19. 399 doi:10.7567/jjaps.19s1.399
Tsuchiya, Toshiaki, Nakajima, Shigeru (1982) Novel High Alpha-Particle-Immunity and High Density d-RAM Cell. Japanese Journal of Applied Physics, 21. 79 doi:10.7567/jjaps.21s1.79
Mikami, Osamu (1980) A Coupled-Waveguide TE/TM Mode Splitter. Japanese Journal of Applied Physics, 19. 455 doi:10.7567/jjaps.19s1.455
Masuhara, Toshiaki, Muller, Richard S. (1977) Analytical Technique for the Design of DMOS Transistors. Japanese Journal of Applied Physics, 16. 173 doi:10.7567/jjaps.16s1.173
Nakamura, Tohru, Masuhara, Toshiaki, Asai, Shojiro (1978) Photocurrent-driven B-MOS without External Power Supply. Japanese Journal of Applied Physics, 17. 43 doi:10.7567/jjaps.17s1.43
Sage, Jay P., Cappon, Arthur M. (1980) CCD Analog-Analog Correlator with Four-FET Bridge Multipliers. Japanese Journal of Applied Physics, 19. 265 doi:10.7567/jjaps.19s1.265
 
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