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Hirabayashi, Izumi, Morigaki, Kazuo, Nitta, Shoji (1980) New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous Silicon. Japanese Journal of Applied Physics, 19 (7) doi:10.1143/jjap.19.l357

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Reference TypeJournal (article/letter/editorial)
TitleNew Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous Silicon
JournalJapanese Journal of Applied Physics
AuthorsHirabayashi, IzumiAuthor
Morigaki, KazuoAuthor
Nitta, ShojiAuthor
Year1980 (July)Volume19
Issue7
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.19.l357Search in ResearchGate
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Mindat Ref. ID14984197Long-form Identifiermindat:1:5:14984197:1
GUID0
Full ReferenceHirabayashi, Izumi, Morigaki, Kazuo, Nitta, Shoji (1980) New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous Silicon. Japanese Journal of Applied Physics, 19 (7) doi:10.1143/jjap.19.l357
Plain TextHirabayashi, Izumi, Morigaki, Kazuo, Nitta, Shoji (1980) New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous Silicon. Japanese Journal of Applied Physics, 19 (7) doi:10.1143/jjap.19.l357
In(1980, July) Japanese Journal of Applied Physics Vol. 19 (7) Japan Society of Applied Physics

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Morigaki, Kazuo, Sano, Yoshio, Hirabayashi, Izumi (1982) Defect Creation by Optical Excitation in Hydrogenated Amorphous Silicon as Elucidated by Optically Detected Magnetic Resonance. Journal of the Physical Society of Japan, 51 (1). 147-152 doi:10.1143/jpsj.51.147
Sano, Yoshio, Morigaki, Kazuo, Hirabayashi, Izumi, Konagai, Makoto (1982) Optically Detected Magnetic Resonance in Fluorinated Amorphous Silicon (a-Si: H, F) Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l291
Hirabayashi, Izumi, Morigaki, Kazuo, Nitta, Shoji (1981) Time-Resolved Luminescence and Its Fatigue Effect in Hydrogenated Amorphous Silicon. Journal of the Physical Society of Japan, 50 (9). 2961-2968 doi:10.1143/jpsj.50.2961
Hirabayashi, Izumi, Morigaki, Kazuo, Sano, Yoshio (1981) Photoacoustic Detection of Paramagnetic Resonance in Solids. Japanese Journal of Applied Physics, 20 (3) doi:10.1143/jjap.20.l208
Yamaguchi, Masaaki, Morigaki, Kazuo (1981) Modulated Photocurrent in Hydrogenated Amorphous Silicon. Japanese Journal of Applied Physics, 20 (9) doi:10.1143/jjap.20.l677
Kumeda, Minoru, Shimizu, Tatsuo (1980) ESR in Hydrogenated Amorphous Silicon. Japanese Journal of Applied Physics, 19 (4) doi:10.1143/jjap.19.l197
Takeda, Kosei, Hikita, Harumi, Kimura, Yutaka, Yokomichi, Haruo, Morigaki, Kazuo (1998) Electron Spin Resonance Study of Light-Induced Annealing of Dangling Bonds in Glow Discharge Hydrogenated Amorphous Silicon: Deconvolution of Electron Spin Resonance Spectra. Japanese Journal of Applied Physics, 37. 6309-6317 doi:10.1143/jjap.37.6309
Koh, Youn-Kyu, Okamoto, Hiroaki, Murakami, Kouichi, Gamo, Kenji, Hamakawa, Yohihiro, Namba, Susumu (1980) Electrical Properties of Laser-Annealed Glow-Discharge Amorphous Silicon Layers. Japanese Journal of Applied Physics, 19 (5) 849-853 doi:10.1143/jjap.19.849
Oda, Masatoshi, Hirata, Kazuo (1980) Undercutting Phenomena in Al Plasma Etching. Japanese Journal of Applied Physics, 19 (7) doi:10.1143/jjap.19.l405
Morigaki, Kazuo (1988) Microscopic Mechanism for the Photo-Creation of Dangling Bonds in a-Si:H. Japanese Journal of Applied Physics, 27. 163-168 doi:10.1143/jjap.27.163
Usami, Katsuhisa, Shimada, Toshikazu, Katayama, Yoshifumi (1980) Observation of Si-2p Level Shift in Hydrogenated Amorphous Silicon by X-Ray Photoelectron Spectroscopy. Japanese Journal of Applied Physics, 19 (7) doi:10.1143/jjap.19.l389
 
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