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Fujii, Yasuhiro, Moritani, Akihiro, Nakai, Junkichi (1981) Photoacoustic Spectroscopy Theory for Multi-Layered Samples and Interference Effect. Japanese Journal of Applied Physics, 20 (5) 1005 doi:10.1143/jjap.20.1005

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Reference TypeJournal (article/letter/editorial)
TitlePhotoacoustic Spectroscopy Theory for Multi-Layered Samples and Interference Effect
JournalJapanese Journal of Applied Physics
AuthorsFujii, YasuhiroAuthor
Moritani, AkihiroAuthor
Nakai, JunkichiAuthor
Year1981 (May)Volume20
Issue5
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.1005Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14984967Long-form Identifiermindat:1:5:14984967:0
GUID0
Full ReferenceFujii, Yasuhiro, Moritani, Akihiro, Nakai, Junkichi (1981) Photoacoustic Spectroscopy Theory for Multi-Layered Samples and Interference Effect. Japanese Journal of Applied Physics, 20 (5) 1005 doi:10.1143/jjap.20.1005
Plain TextFujii, Yasuhiro, Moritani, Akihiro, Nakai, Junkichi (1981) Photoacoustic Spectroscopy Theory for Multi-Layered Samples and Interference Effect. Japanese Journal of Applied Physics, 20 (5) 1005 doi:10.1143/jjap.20.1005
In(1981, May) Japanese Journal of Applied Physics Vol. 20 (5) Japan Society of Applied Physics

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Fujii, Yasuhiro, Moritani, Akihiro, Nakai, Junkichi (1981) Photoacoustic Spectroscopy Theory for Multi-Layered Samples and Interference Effect. Japanese Journal of Applied Physics, 20 (2) 361-367 doi:10.1143/jjap.20.361
Yamagishi, Chouho, Moritani, Akihiro, Nakai, Junkichi (1981) Study of Anodic Film Growth on GaAs and Bi2Te3byin situPhotoacoustic Technique. Japanese Journal of Applied Physics, 20 (8) 1423-1428 doi:10.1143/jjap.20.1423
Misawa, Kiyotoshi, Moritani, Akihiro, Nakai, Junkichi (1977) Electroreflectance of Si-MOS. Japanese Journal of Applied Physics, 16 (1) 219 doi:10.1143/jjap.16.219
Misawa, Kiyotoshi, Moritani, Akihiro, Nakai, Junkichi (1976) Electroreflectance of Si-MOS. Japanese Journal of Applied Physics, 15 (7) 1309-1316 doi:10.1143/jjap.15.1309
Oimura, Katsuhiko, Moritani, Akihiro, Nakai, Junkichi (1979) Electroreflectance of Anodized n-GaAs MOS. Japanese Journal of Applied Physics, 18 (8) 1613-1614 doi:10.1143/jjap.18.1613
Shimano, Akio, Moritani, Akihiro, Nakai, Junkichi (1976) Surface Potential and Surface State Density in Anodized GaAs MOS Capacitors. Japanese Journal of Applied Physics, 15 (5) 939-940 doi:10.1143/jjap.15.939
Yamagishi, Chouho, Moritani, Akihiro, Nakai, Junkichi (1980) Effect of CW-Laser Irradiation on Interface Properties of Anodized GaAs-MOS. Japanese Journal of Applied Physics, 19 (9) 1795-1796 doi:10.1143/jjap.19.1795
Yamagishi, Chouho, Moritani, Akihiro, Nakai, Junkichi (1980) Observation of Anodic Film Growth of Bi2Te3byin situPhotoacoustic Technique. Japanese Journal of Applied Physics, 19 (11) doi:10.1143/jjap.19.l711
Misawa, Kiyotoshi, Moritani, Akihiro, Nakai, Junkichi (1976) Electrostriction and Piezoelectricity of Thermally Grown SiO2and Sputtered SiO2Films. Japanese Journal of Applied Physics, 15 (11) 2103-2111 doi:10.1143/jjap.15.2103
Moritani, Akihiro, Fujioka, Masanobu, Nakai, Junkichi (1976) Phonon-Assisted Tunneling in Bi2Te3through RF Sputtered SiO2Films. Japanese Journal of Applied Physics, 15 (8) 1523-1527 doi:10.1143/jjap.15.1523
Hoshino, Takashi, Moritani, Akihiro, Nakai, Junkichi (1984) Ellipsometry and Reflectance of Etched (100) Surfaces of Undoped, Semi-Insulating LEC GaAs. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l250
 
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