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Yagi, Atsuo, Kawaji, Shinji (1981) Effects of Tailing of Density of State on the Mobility of Si-MOSFETs at Low Temperatures–A Proposal for the Method of Characterization of Si-SiO2Interfaces–. Japanese Journal of Applied Physics, 20 (5) 909-915 doi:10.1143/jjap.20.909

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Reference TypeJournal (article/letter/editorial)
TitleEffects of Tailing of Density of State on the Mobility of Si-MOSFETs at Low Temperatures–A Proposal for the Method of Characterization of Si-SiO2Interfaces–
JournalJapanese Journal of Applied Physics
AuthorsYagi, AtsuoAuthor
Kawaji, ShinjiAuthor
Year1981 (May)Volume20
Issue5
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.909Search in ResearchGate
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Mindat Ref. ID14984984Long-form Identifiermindat:1:5:14984984:7
GUID0
Full ReferenceYagi, Atsuo, Kawaji, Shinji (1981) Effects of Tailing of Density of State on the Mobility of Si-MOSFETs at Low Temperatures–A Proposal for the Method of Characterization of Si-SiO2Interfaces–. Japanese Journal of Applied Physics, 20 (5) 909-915 doi:10.1143/jjap.20.909
Plain TextYagi, Atsuo, Kawaji, Shinji (1981) Effects of Tailing of Density of State on the Mobility of Si-MOSFETs at Low Temperatures–A Proposal for the Method of Characterization of Si-SiO2Interfaces–. Japanese Journal of Applied Physics, 20 (5) 909-915 doi:10.1143/jjap.20.909
In(1981, May) Japanese Journal of Applied Physics Vol. 20 (5) Japan Society of Applied Physics

See Also

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Yagi, Atsuo (1981) Anomalous Conductivity at Low Temperatures in an Si-MOSFET with Sub-Micron Gate. Japanese Journal of Applied Physics, 20 (11) 2255-2256 doi:10.1143/jjap.20.2255
Kamada, Mikio, Yagi, Atsuo (1982) Effects of Silicon-Nitride Films on the Electronic Properties of Si–SiO2Interfaces. Japanese Journal of Applied Physics, 21. 1684-1688 doi:10.1143/jjap.21.1684
Kawaguchi, Yoichi, Kawaji, Shinji (1982) A Study of Electron Mobility and Electron-Phonon Interaction in Si MOSFETs by Negative Magnetoresistance Experiments. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l709
Ōmura, Yasuhisa (1981) Bulk Doping Effect on Field-Effect Mobility of MOSFETs. Japanese Journal of Applied Physics, 20 (10) 1985-1986 doi:10.1143/jjap.20.1985
Yoshihiro, Kazuo, Kinoshita, Joji, Inagaki, Katsuya, Yamanouchi, Chikako, Moriyama, Jiro, Kawaji, Shinji (1982) Quantized Hall Resistivity in Si-MOSFETs Measured at Liq.3He Temperatures. Journal of the Physical Society of Japan, 51 (1). 5-6 doi:10.1143/jpsj.51.5
Munakata, Chusuke, Miyazaki, Masaru (1981) A Novel Method of Electron Beam Recording on a Si Wafer. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l293
Sugaya, Azumao, Kawaji, Shinji (1972) Angular Distribution Measurements of Photoemitted Electrons for InAs by Means of Magnetic Field. Japanese Journal of Applied Physics, 11 (6) 909 doi:10.1143/jjap.11.909
Koizumi, Haruhiko, Sato, Shuichi, Kawaji, Shinji (1967) Effects of Light and Temperature on the Growth of Silicon Stain Films. Japanese Journal of Applied Physics, 6 (5) 657-658 doi:10.1143/jjap.6.657
Kawaguchi, Yoichi, Kawaji, Shinji (1980) Lattice scattering mobility of n-inversion layers in si(100) at low temperatures. Surface Science, 98 (1). 211-217 doi:10.1016/0039-6028(80)90497-5
Sugii, Nobuyuki, Washio, Katsuyoshi (2003) Low-Temperature Electrical Characteristics of Strained-Si MOSFETs. Japanese Journal of Applied Physics, 42. 1924-1927 doi:10.1143/jjap.42.1924
Giustino, Feliciano, Bongiorno, Angelo, Pasquarello, Alfredo (2004) Electronic Structure at Realistic Si(100)-SiO2Interfaces. Japanese Journal of Applied Physics, 43 (11) 7895-7898 doi:10.1143/jjap.43.7895
 
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