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Hirayama, Makoto, Asai, Sotoju, Matsumoto, Heihachi, Sawada, Kokichi, Nagasawa, Koichi (1981) Time Dependent Dielectric Breakdown of Thin SiO2Films. Japanese Journal of Applied Physics, 20 (5) doi:10.1143/jjap.20.l329

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Reference TypeJournal (article/letter/editorial)
TitleTime Dependent Dielectric Breakdown of Thin SiO2Films
JournalJapanese Journal of Applied Physics
AuthorsHirayama, MakotoAuthor
Asai, SotojuAuthor
Matsumoto, HeihachiAuthor
Sawada, KokichiAuthor
Nagasawa, KoichiAuthor
Year1981 (May)Volume20
Issue5
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.l329Search in ResearchGate
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Mindat Ref. ID14985003Long-form Identifiermindat:1:5:14985003:4
GUID0
Full ReferenceHirayama, Makoto, Asai, Sotoju, Matsumoto, Heihachi, Sawada, Kokichi, Nagasawa, Koichi (1981) Time Dependent Dielectric Breakdown of Thin SiO2Films. Japanese Journal of Applied Physics, 20 (5) doi:10.1143/jjap.20.l329
Plain TextHirayama, Makoto, Asai, Sotoju, Matsumoto, Heihachi, Sawada, Kokichi, Nagasawa, Koichi (1981) Time Dependent Dielectric Breakdown of Thin SiO2Films. Japanese Journal of Applied Physics, 20 (5) doi:10.1143/jjap.20.l329
In(1981, May) Japanese Journal of Applied Physics Vol. 20 (5) Japan Society of Applied Physics

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Matsumoto, Heihachi, Sawada, Kokichi, Asai, Sotoju, Hirayama, Makoto, Nagasawa, Koichi (1981) Effect of Long Term Stress on Hot Electron Trapping. Japanese Journal of Applied Physics, 20. 255 doi:10.7567/jjaps.20s1.255
Matsumoto, Heihachi, Sawada, Kokichi, Asai, Sotoju, Hirayama, Makoto, Nagasawa, Koichi (1980) The Effect of Gate Bias on Hot Electron Trapping. Japanese Journal of Applied Physics, 19 (10) doi:10.1143/jjap.19.l574
Miyamoto, Kazutoshi, Matsumoto, Heihachi, Ohbayashi, Yoshikazu, Ohkura, Isao, Matsumura, Hiroshi (1981) A New Breakdown Phenomenon in Fine Structured VLSI Circuits. Japanese Journal of Applied Physics, 20 (7) doi:10.1143/jjap.20.l523
Satoh, Yoshihiro, Iwamori, Kiyoshi, Sawada, Kokichi, Miyamoto, Kazutoshi, Matsumoto, Heihachi (1984) Moisture Induced Failures in Plastic Encapsulated 64 kbit Dynamic RAM's. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l274
Asai, Hiromitsu, Sugiyama, Koichi (1981) Liquid Phase Epitaxial Growth of CuGaSe2on ZnSe. Japanese Journal of Applied Physics, 20 (8) 1401-1405 doi:10.1143/jjap.20.1401
Serikawa, Tadashi, Yachi, Toshiaki (1981) Effect of Mixing Hydrogen-Argon on Magnetron Sputtered SiO2Films. Japanese Journal of Applied Physics, 20 (2) doi:10.1143/jjap.20.l111
Sawada, Akashi, Usui, Setsuo, Kikuchi, Makoto (1981) Behavior of Fluorine Atoms in a-Si:F:H Alloy Investigated by Gas Evolution and Infrared Absorption. Japanese Journal of Applied Physics, 20 (2) doi:10.1143/jjap.20.l133
Matsuura, Makoto, Ishida, Makoto, Suzuki, Akira, Hara, Kunihiko (1981) Laser Oxidation of GaAs. Japanese Journal of Applied Physics, 20 (10) doi:10.1143/jjap.20.l726
Miyairi, Keiichi (2003) Frequency-Dependent Dielectric Breakdown in Thin Polyvinylcarbazole Films. Japanese Journal of Applied Physics, 42. 5153-5157 doi:10.1143/jjap.42.5153
Teramoto, Akinobu, Kobayashi, Kiyoteru, Ohno, Yoshikazu, Hirayama, Makoto (1998) Highly Reliable SiO2Films Formed by UV-O2Oxidation. Japanese Journal of Applied Physics, 37. 1122-1124 doi:10.1143/jjap.37.1122
Kuwata, Jun, Onoda, Makoto, Uchino, Kenji, Nomura, Shoichiro (1981) Dielectric Losses in Bi12GeO20Single Crystals. Japanese Journal of Applied Physics, 20 (8) 1609-1610 doi:10.1143/jjap.20.1609
 
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