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Mizuta, Masashi, Kawata, Seiji, Iwamoto, Takashi, Kukimoto, Hiroshi (1984) Correlation between Surface Morphology and Electrical Properties of GaAs Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l283

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Reference TypeJournal (article/letter/editorial)
TitleCorrelation between Surface Morphology and Electrical Properties of GaAs Grown by Metalorganic Chemical Vapor Deposition
JournalJapanese Journal of Applied Physics
AuthorsMizuta, MasashiAuthor
Kawata, SeijiAuthor
Iwamoto, TakashiAuthor
Kukimoto, HiroshiAuthor
Year1984 (May 20)Volume23
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.23.l283Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14987514Long-form Identifiermindat:1:5:14987514:3
GUID0
Full ReferenceMizuta, Masashi, Kawata, Seiji, Iwamoto, Takashi, Kukimoto, Hiroshi (1984) Correlation between Surface Morphology and Electrical Properties of GaAs Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l283
Plain TextMizuta, Masashi, Kawata, Seiji, Iwamoto, Takashi, Kukimoto, Hiroshi (1984) Correlation between Surface Morphology and Electrical Properties of GaAs Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l283
In(1984) Japanese Journal of Applied Physics Vol. 23. Japan Society of Applied Physics

See Also

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Iwamoto, Takashi, Mori, Kazuo, Mizuta, Masashi, Kukimoto, Hiroshi (1985) Pulsed Operation of InGaAsP/InGaP Double Heterostructure Visible Lasers Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l131
Iwamoto, Takashi, Mori, Kazuo, Mizuta, Masashi, Kunimoto, Hiroshi (1983) Optically Pumped Laser Operation of InGaAsP/InGaP Double Heterostructures Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l429
Iwamoto, Takashi, Mori, Kazuo, Mizuta, Masashi, Kukimoto, Hiroshi (1983) Organometallic Vapor Phase Epitaxial Growth of In1-xGaxAsyP1-yon GaAs. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l191
Tachikawa, Masami, Mizuta, Masashi, Kukimoto, Hiroshi (1984) DX Deep Centers in AlxGa1-xAs Grown by Liquid-Phase Epitaxy. Japanese Journal of Applied Physics, 23. 1594-1597 doi:10.1143/jjap.23.1594
Tanaka, Shosaku, Kuno, Masaaki, Yamamoto, Atsuya, Kobayashi, Hiroshi, Mizuta, Masashi, Kukimoto, Hiroshi, Saito, Hiroshi (1984) Picosecond Dynamics of Electron-Hole Plasma in GaAs/AlAs Multiple Quantum Well Structure. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l427
Ogura, Mototsugu, Mizuta, Masashi, Hase, Nobuyasu, Kukimoto, Hiroshi (1984) A Study of Deep Levels in MOCVD-Grown InP/Semi-Insulating InP Structure. Japanese Journal of Applied Physics, 23. 79-83 doi:10.1143/jjap.23.79
Yoshino, Junji, Tachikawa, Masami, Matsuda, Naotoshi, Mizuta, Masashi, Kukimoto, Hiroshi (1984) Alloy Fluctuation in Mixed Compound Semiconductors as Studied by Deep Level Transient Spectroscopy. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l29
Uwai, Kunihiko, Susa, Nobuhiko, Mikami, Osamu, Fukui, Takashi (1984) Effects of Substrate Temperatures and V/III Ratios on Epitaxial InP Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l121
Mitsuhashi, Hiroshi, Mitsuishi, Iwao, Mizuta, Masashi, Kukimoto, Hiroshi (1985) Coherent Growth of ZnSe on GaAs by MOCVD. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l578
Nakada, Naoyuki, Mori, Masayoshi, Ishikawa, Hiroyasu, Egawa, Takashi, Jimbo, Takashi (2003) Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 42. 2573-2577 doi:10.1143/jjap.42.2573
Ogura, Mototsugu, Mizuta, Masashi, Kukimoto, Hiroshi (1984) A Localized Defect in InP with Strong Temperature Dependence of Capture Cross-Section. Japanese Journal of Applied Physics, 23. 44-48 doi:10.1143/jjap.23.44
 
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