Fujisada, Hiroyuki, Sasase, Takafumi (1984) Evaluation of InSb MOS Structure with Thin Anodic Oxide. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l46
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Evaluation of InSb MOS Structure with Thin Anodic Oxide | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Fujisada, Hiroyuki | Author | |
| Sasase, Takafumi | Author | ||
| Year | 1984 (January 20) | Volume | 23 |
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.1143/jjap.23.l46Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 14987580 | Long-form Identifier | mindat:1:5:14987580:8 |
| GUID | 0 | ||
| Full Reference | Fujisada, Hiroyuki, Sasase, Takafumi (1984) Evaluation of InSb MOS Structure with Thin Anodic Oxide. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l46 | ||
| Plain Text | Fujisada, Hiroyuki, Sasase, Takafumi (1984) Evaluation of InSb MOS Structure with Thin Anodic Oxide. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l46 | ||
| In | (1984) Japanese Journal of Applied Physics Vol. 23. Japan Society of Applied Physics | ||
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