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Kawaguchi, Yoshihiro, Asahi, Hajime, Nagai, Haruo (1984) MBE Growth of High-Quality InP Using Triethylindium as an Indium Source. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l737

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Reference TypeJournal (article/letter/editorial)
TitleMBE Growth of High-Quality InP Using Triethylindium as an Indium Source
JournalJapanese Journal of Applied Physics
AuthorsKawaguchi, YoshihiroAuthor
Asahi, HajimeAuthor
Nagai, HaruoAuthor
Year1984 (September 20)Volume23
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.23.l737Search in ResearchGate
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Mindat Ref. ID14987684Long-form Identifiermindat:1:5:14987684:3
GUID0
Full ReferenceKawaguchi, Yoshihiro, Asahi, Hajime, Nagai, Haruo (1984) MBE Growth of High-Quality InP Using Triethylindium as an Indium Source. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l737
Plain TextKawaguchi, Yoshihiro, Asahi, Hajime, Nagai, Haruo (1984) MBE Growth of High-Quality InP Using Triethylindium as an Indium Source. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l737
In(1984) Japanese Journal of Applied Physics Vol. 23. Japan Society of Applied Physics

See Also

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Kawaguchi, Yoshihiro, Asahi, Hajime, Nagai, Haruo (1985) Gas Source MBE Growth of High-Quality InP Using Triethylindium and Phosphine. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l221
Matsuoka, Takashi, Nagai, Haruo, Noguchi, Yoshio, Suzuki, Yoshio, Kawaguchi, Yoshihiro (1984) Effect of the Grating Phase at the Cleaved Facet on DFB Laser Properties. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l138
Suzuki, Yoshio, Noguchi, Yoshio, Nagai, Haruo (1984) InP/InGaAsP 1.5µm Region Etching Cavity Laser. Japanese Journal of Applied Physics, 23. 268-269 doi:10.1143/jjap.23.268
Kondo, Kazuhiro, Ishikawa, Hideaki, Sasa, Shigehiko, Sugiyama, Yoshihiro, Hiyamizu, Satoshi (1986) MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l52
Nakashima, Kiichi, Kawaguchi, Yoshihiro, Kawamura, Yuichi, Asahi, Hajime, Imamura, Yoshihiro (1987) Intermixing Process of InGaAs/InP MQW Grown by Metalorganic Molecular Beam Epitaxy at Thermal Annealing. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1620
Yoshikawa, Akihiko, Tanaka, Keiji, Yamaga, Shigeki, Kasai, Haruo (1984) Growth of High-Quality ZnSe Films by Low-Pressure Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l424
Kawamura, Yuichi, Asahi, Hajime, Nagai, Haruo (1981) Molecular Beam Epitaxial Growth of Undoped Low-Resistivity InxGa1-xP on GaAs at High Substrate Temperatures (500–580°C) Japanese Journal of Applied Physics, 20 (11) doi:10.1143/jjap.20.l807
Amano, Toshimasa, Kondo, Susumu, Nagai, Haruo (1993) High Purity Liquid Phase Epitaxial Growth of InP. Japanese Journal of Applied Physics, 32. 4878-4884 doi:10.1143/jjap.32.4878
Watanabe, Miyoko Oku, Maeda, Hajime (1984) Electron Activation Energy in Si-Doped AlGaAs Grown by MBE. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l734
Kondo, Susumu, Amano, Toshimasa, Nagai, Haruo (1987) High-Purity LPE Growth of InP by Co Addition to an In–P Melt. Japanese Journal of Applied Physics, 26. 1997-2001 doi:10.1143/jjap.26.1997
Shinohara, Masanori, Ito, Tomonori, Wada, Kazumi, Imamura, Yoshihiro (1984) Electrical Properties of Oval Defects in GaAs Grown by MBE. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l371
 
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