Hamasaki, Toshihiko, Ueda, Masato, Chayahara, Akiyoshi, Hirose, Masataka, Osaka, Yukio (1984) Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l81
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate | ||
Journal | Japanese Journal of Applied Physics | ||
Authors | Hamasaki, Toshihiko | Author | |
Ueda, Masato | Author | ||
Chayahara, Akiyoshi | Author | ||
Hirose, Masataka | Author | ||
Osaka, Yukio | Author | ||
Year | 1984 (February 20) | Volume | 23 |
Publisher | Japan Society of Applied Physics | ||
DOI | doi:10.1143/jjap.23.l81Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 14987710 | Long-form Identifier | mindat:1:5:14987710:9 |
GUID | 0 | ||
Full Reference | Hamasaki, Toshihiko, Ueda, Masato, Chayahara, Akiyoshi, Hirose, Masataka, Osaka, Yukio (1984) Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l81 | ||
Plain Text | Hamasaki, Toshihiko, Ueda, Masato, Chayahara, Akiyoshi, Hirose, Masataka, Osaka, Yukio (1984) Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l81 | ||
In | (1984) Japanese Journal of Applied Physics Vol. 23. Japan Society of Applied Physics |
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