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Hamasaki, Toshihiko, Ueda, Masato, Chayahara, Akiyoshi, Hirose, Masataka, Osaka, Yukio (1984) Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l81

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Reference TypeJournal (article/letter/editorial)
TitleEffect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
JournalJapanese Journal of Applied Physics
AuthorsHamasaki, ToshihikoAuthor
Ueda, MasatoAuthor
Chayahara, AkiyoshiAuthor
Hirose, MasatakaAuthor
Osaka, YukioAuthor
Year1984 (February 20)Volume23
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.23.l81Search in ResearchGate
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Mindat Ref. ID14987710Long-form Identifiermindat:1:5:14987710:9
GUID0
Full ReferenceHamasaki, Toshihiko, Ueda, Masato, Chayahara, Akiyoshi, Hirose, Masataka, Osaka, Yukio (1984) Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l81
Plain TextHamasaki, Toshihiko, Ueda, Masato, Chayahara, Akiyoshi, Hirose, Masataka, Osaka, Yukio (1984) Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l81
In(1984) Japanese Journal of Applied Physics Vol. 23. Japan Society of Applied Physics


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