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Hoshino, Masataka, Komeno, Junji, Ozeki, Masashi (1984) Growth of InGaAsP Quaternary by Chloride VPE. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l928

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of InGaAsP Quaternary by Chloride VPE
JournalJapanese Journal of Applied Physics
AuthorsHoshino, MasatakaAuthor
Komeno, JunjiAuthor
Ozeki, MasashiAuthor
Year1984 (December 20)Volume23
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.23.l928Search in ResearchGate
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Mindat Ref. ID14987754Long-form Identifiermindat:1:5:14987754:3
GUID0
Full ReferenceHoshino, Masataka, Komeno, Junji, Ozeki, Masashi (1984) Growth of InGaAsP Quaternary by Chloride VPE. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l928
Plain TextHoshino, Masataka, Komeno, Junji, Ozeki, Masashi (1984) Growth of InGaAsP Quaternary by Chloride VPE. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l928
In(1984) Japanese Journal of Applied Physics Vol. 23. Japan Society of Applied Physics

See Also

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Kodama, Kunihiko, Komeno, Junji, Ozeki, Masashi (1984) Emission Mechanism in In0.53Ga0.47As/InP Quantum-Well Heterostructures Grown by Chloride Vapor-Phase Epitaxy. Japanese Journal of Applied Physics, 23. 1653-1654 doi:10.1143/jjap.23.1653
Kodama, Kunihiko, Komeno, Junji, Hoshino, Masataka, Ozeki, Masashi (1986) Photoluminescence Excitation Spectroscopy of In0.53Ga0.47As/InP Multi-Quantum-Well Heterostructures. Japanese Journal of Applied Physics, 25. 558-562 doi:10.1143/jjap.25.558
Kitahara, Kuninori, Hoshino, Masataka, Kodama, Kunihiko, Ozeki, Masashi (1986) Donor-Related Deep Level in S-Doped Ga0.52In0.48P Grwon by Chloride VPE. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l534
Kitahara, Kuninori, Hoshino, Masataka, Kodama, Kunihiko, Ozeki, Masashi (1986) Shallow and Deep Donor Levels in S-Doped Ga0.52In0.48P Grown by Chloride VPE. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l191
Hoshino, Masataka, Tanaka, Kazuhiro, Komeno, Junji, Kitahara, Kuninori, Kodama, Kunihiko, Ozeki, Masashi (1986) Selective growth of InP buried structure by chloride vapor phase epitaxy. Applied Physics Letters, 48 (2). 186-188 doi:10.1063/1.96938
Hoshino, Masataka, Kodama, Kunihiko, Kitahara, Kuninori, Komeno, Junji, Ozeki, Masashi (1986) Chloride vapor phase epitaxial growth of a Ga0.52In0.48P/GaAs heterostructure with an abrupt heterointerface. Applied Physics Letters, 48 (15). 983-985 doi:10.1063/1.96631
Kodama, Kunihiko, Hoshino, Masataka, Kitahara, Kuninori, Ozeki, Masashi (1986) Near-Band-Edge Photoluminescenee of High-Purity GaxIn1-xP Grown by Chloride Vapor-Phase Epitaxy. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l551
Kodama, Kunihiko, Hoshino, Masataka, Kitahara, Kuninori, Takikawa, Masahiko, Ozeki, Masashi (1986) Two-Dimensional Electron Gas at GaAs/Ga0.52In0.48P Heterointerface Grown by Chloride Vapor-Phase Epitaxy. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l127
Hoshino, Masataka, Kasai, Kazumi, Komeno, Junji (1992) Surface Morphology and Line Fill Properties of Gold Grown by Organometallic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 31. 4403-4406 doi:10.1143/jjap.31.4403
Kitahara, Kuninori, Hoshino, Masataka, Kodama, Kunihiko, Ozeki, Masashi (1987) Two-Dimensional-Electron Gas in Undoped and Selectively-Doped GaInP/GaAs Heterostructures Grown by Chloride-Vapor-Phase Epitaxy. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1119
Hoshino, Masataka, Suehiro, Haruyoshi, Kasai, Kazumi, Komeno, Junji (1993) Chemical-Mechanical Polishing of Metalorganic Chemical-Vapor-Deposited Gold for LSI Interconnection. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l392
 
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