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Tajima, Michio, Ohyama, Hideaki, Okushi, Hideyo, Yamasaki, Satoshi, Tanaka, Kazunobu (1989) The Staebler-Wronski Effect on Defect Luminescence in Hydrogenated Amorphous Silicon. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1086

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Reference TypeJournal (article/letter/editorial)
TitleThe Staebler-Wronski Effect on Defect Luminescence in Hydrogenated Amorphous Silicon
JournalJapanese Journal of Applied Physics
AuthorsTajima, MichioAuthor
Ohyama, HideakiAuthor
Okushi, HideyoAuthor
Yamasaki, SatoshiAuthor
Tanaka, KazunobuAuthor
Year1989 (July 20)Volume28
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.28.l1086Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14993506Long-form Identifiermindat:1:5:14993506:9
GUID0
Full ReferenceTajima, Michio, Ohyama, Hideaki, Okushi, Hideyo, Yamasaki, Satoshi, Tanaka, Kazunobu (1989) The Staebler-Wronski Effect on Defect Luminescence in Hydrogenated Amorphous Silicon. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1086
Plain TextTajima, Michio, Ohyama, Hideaki, Okushi, Hideyo, Yamasaki, Satoshi, Tanaka, Kazunobu (1989) The Staebler-Wronski Effect on Defect Luminescence in Hydrogenated Amorphous Silicon. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1086
In(1989) Japanese Journal of Applied Physics Vol. 28. Japan Society of Applied Physics

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Bandyopadhyay, A. K., Banerjee, Ratnabali, Batabyal, A. K., Barua, A. K., Okushi, Hideyo, Tanaka, Kazunobu (1989) Effect of Light Soaking Temperature on the Metastable Defect Distribution in Magnetron Sputtered Hydrogenated Amorphous Silicon Films. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1704
Matsuda, Akihisa, Matsumura, Mitsuo, Yamasaki, Satoshi, Yamamoto, Hideo, Imura, Takeshi, Okushi, Hideyo, Iizima, Sigeru, Tanaka, Kazunobu (1981) Boron Doping of Hydrogenated Silicon Thin Films. Japanese Journal of Applied Physics, 20 (3) doi:10.1143/jjap.20.l183
Bautista, Ma. Lourdes B., Enomoto, Hiroyuki, Ozaki, Hajime (1989) Field-Effect Study of the Staebler-Wronski Effect in Hydrogenated Amorphous Silicon. Japanese Journal of Applied Physics, 28. 153-159 doi:10.1143/jjap.28.153
Hata, Nobuhiro, Yamasaki, Satoshi, Oheda, Hidetoshi, Matsuda, Akihisa, Okushi, Hideyo, Tanaka, Kazunobu (1981) A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si:H Films. Japanese Journal of Applied Physics, 20 (11) doi:10.1143/jjap.20.l793
Okushi, Hideyo, Yamasaki, Satoshi, Tanaka, Kazunobu (1992) Light-induced defects in phosphorus-doped hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 141. 176-187 doi:10.1016/s0022-3093(05)80532-0
Tokumaru, Yozo, Okushi, Hideyo, Naka, Hiroyoshi (1989) Scanning Isothermal Current Transient Spectroscopy (SICTS) and Its Application to the Microscopic Distribution Measurement of Gap States in Hydrogenated Amorphous Silicon Films. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1061
Ikuta, Kazuyuki, Toyoshima, Yasutake, Yamasaki, Satoshi, Matsuda, Akihisa, Tanaka, Kazunobu (1995) Hydrogen-Initiated Nucleation and Growth of Hydrogenated Amorphous Silicon on Graphite. Japanese Journal of Applied Physics, 34. doi:10.1143/jjap.34.l379
Shimizu, Tatsuo (2004) Staebler-Wronski Effect in Hydrogenated Amorphous Silicon and Related Alloy Films. Japanese Journal of Applied Physics, 43 (6) 3257-3268 doi:10.1143/jjap.43.3257
Yamasaki, Satoshi, Okushi, Hideyo, Matsuda, Akihisa, Oheda, Hidetoshi, Hata, Nobuhiro, Tanaka, Kazunobu (1981) Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy. Japanese Journal of Applied Physics, 20 (9) doi:10.1143/jjap.20.l665
Yamasaki, Satoshi, Oheda, Hidetoshi, Matsuda, Akihisa, Okushi, Hideyo, Tanaka, Kazunobu (1982) Gap-State Profiles of a-Si: H Deduced from Below-Gap Optical Absorption. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l539
Hayashi, Shigenobu, Hayamizu, Kikuko, Yamasaki, Satoshi, Matsuda, Akihisa, Tanaka, Kazunobu (1986) Silicon-29 Nuclear Magnetic Resonance Study of Amorphous-Microcrystalline Mixed-Phase Hydrogenated Silicon. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l313
 
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