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Ogihara, Chisato, Ohta, Hiroshi, Yamaguchi, Masaaki, Morigaki, Kazuo (1989) Optical Absorption Spectra of Band-Edge Modulated a-Si1-xNx:H Films. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l741

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Reference TypeJournal (article/letter/editorial)
TitleOptical Absorption Spectra of Band-Edge Modulated a-Si1-xNx:H Films
JournalJapanese Journal of Applied Physics
AuthorsOgihara, ChisatoAuthor
Ohta, HiroshiAuthor
Yamaguchi, MasaakiAuthor
Morigaki, KazuoAuthor
Year1989 (May 20)Volume28
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.28.l741Search in ResearchGate
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Mindat Ref. ID14994081Long-form Identifiermindat:1:5:14994081:0
GUID0
Full ReferenceOgihara, Chisato, Ohta, Hiroshi, Yamaguchi, Masaaki, Morigaki, Kazuo (1989) Optical Absorption Spectra of Band-Edge Modulated a-Si1-xNx:H Films. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l741
Plain TextOgihara, Chisato, Ohta, Hiroshi, Yamaguchi, Masaaki, Morigaki, Kazuo (1989) Optical Absorption Spectra of Band-Edge Modulated a-Si1-xNx:H Films. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l741
In(1989) Japanese Journal of Applied Physics Vol. 28. Japan Society of Applied Physics

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Ogihara, Chisato, Ohta, Hiroshi, Yamaguchi, Masaaki, Morigaki, Kazuo (1990) Preparation and optical absorption spectra of a new type of artificial semiconducting material: Band-edge-modulated a-Si1-xNx:H films. Philosophical Magazine B, 62 (3). 261-269 doi:10.1080/13642819008208629
Yamaguchi, M., Ogihara, C., Ohta, H., Morigaki, K. (1989) Optical properties of band-edge modulated a-Si1−xNx:H films. Journal of Non-Crystalline Solids, 114. 705-707 doi:10.1016/0022-3093(89)90694-7
Li, Ying, Kondo, M., Yamaguchi, M., Morigaki, K. (1991) Quantized structure in the photoinduced absorption spectra of band-edge modulated a-Si1-xNx:H films. Journal of Non-Crystalline Solids, 137. 1115-1118 doi:10.1016/s0022-3093(05)80318-7
Yamaguchi, Masaaki, Morigaki, Kazuo (1981) Modulated Photocurrent in Hydrogenated Amorphous Silicon. Japanese Journal of Applied Physics, 20 (9) doi:10.1143/jjap.20.l677
Ogihara, C., Ishimura, H., Kinoshita, T., Ikeda, K., Morigaki, K. (1996) Distribution of lifetime of photoluminescence in band-edge modulated a-Si1 − xNx:H films. Journal of Non-Crystalline Solids, 198. 255-258 doi:10.1016/0022-3093(95)00703-2
Yamaguchi, Masaaki, Matsumura, Hideki, Morigaki, Kazuo (1990) Photoluminescence of a-Si:H Films Prepared by Catalytic Chemical Vapor Deposition Method. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1366
Morigaki, Kazuo (1989) The Role of Self-Trapped Holes in the Photoercation of Dangling Bonds in a-Si:H. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l2128
Ogihara, Chisato, Morigaki, Kazuo (1988) Electron-Hole Recombination in a-Si:H/ a-Si1-xNx:H Superlattices as Elucidated by Time-Resolved Luminescence and Optically Detected Magnetic Resonance Measurements. Journal of the Physical Society of Japan, 57 (12). 4409-4417 doi:10.1143/jpsj.57.4409
Niwa, Masaaki, Iwasaki, Hiroshi (1989) SiO2/Si Interfaces Studied by STM. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l2320
Yamaguchi, Hiroshi, Horikoshi, Yoshiji (1989) Luminescence Characteristics from Gaussian Shaped Quantum Wells. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l507
Yamaguchi, Masaaki, Morigaki, Kazuo, Nitta, Shoji (1991) Observation of Light-Induced Phenomena by Photoluminescence and Optically Detected Magnetic Resonance in a-Si1-xNx:H. Journal of the Physical Society of Japan, 60 (5). 1769-1791 doi:10.1143/jpsj.60.1769
 
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