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Yoshitake, Masaaki, Yotsuya, Tsutom, Takiguchi, Katsumi, Ogawa, Soichi (1990) Synthesis of Zr–N Thin Film by Reactive Ion Beam Sputtering. Japanese Journal of Applied Physics, 29. 2800-2808 doi:10.1143/jjap.29.2800

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Reference TypeJournal (article/letter/editorial)
TitleSynthesis of Zr–N Thin Film by Reactive Ion Beam Sputtering
JournalJapanese Journal of Applied Physics
AuthorsYoshitake, MasaakiAuthor
Yotsuya, TsutomAuthor
Takiguchi, KatsumiAuthor
Ogawa, SoichiAuthor
Year1990 (December 20)Volume29
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.29.2800Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14994803Long-form Identifiermindat:1:5:14994803:8
GUID0
Full ReferenceYoshitake, Masaaki, Yotsuya, Tsutom, Takiguchi, Katsumi, Ogawa, Soichi (1990) Synthesis of Zr–N Thin Film by Reactive Ion Beam Sputtering. Japanese Journal of Applied Physics, 29. 2800-2808 doi:10.1143/jjap.29.2800
Plain TextYoshitake, Masaaki, Yotsuya, Tsutom, Takiguchi, Katsumi, Ogawa, Soichi (1990) Synthesis of Zr–N Thin Film by Reactive Ion Beam Sputtering. Japanese Journal of Applied Physics, 29. 2800-2808 doi:10.1143/jjap.29.2800
In(1990) Japanese Journal of Applied Physics Vol. 29. Japan Society of Applied Physics

See Also

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Yoshitake, Masaaki, Yotsuya, Tsutom, Takiguchi, Katsumi, Ogawa, Soichi (1993) Synthesis of Zr-N Thin Film by Reactive Ion Beam Sputtering. Japanese Journal of Applied Physics, 32. 1031 doi:10.1143/jjap.32.1031
Suzuki, Yoshihiko, Yotsuya, Tsutom, Takiguchi, Katsumi, Yoshitake, Masaaki, Ogawa, Soichi (1988) The effect of charged particles when preparing ZnO thin film by ion beam sputtering deposition. Applied Surface Science, 33. 1114-1119 doi:10.1016/0169-4332(88)90424-2
Yoshitake, Masaaki, Yotsuya, Tsutom, Ogawa, Soichi (1992) Effects of Nitrogen Pressure and RF Power on the Properties of Reactive Magnetron Sputtered Zr-N Films and an Application to a Thermistor. Japanese Journal of Applied Physics, 31. 4002-4009 doi:10.1143/jjap.31.4002
Yotsuya, Tsutom, Yoshitake, Masaaki, Ogawa, Soichi, Suzuki, Yoshihiko, Yamamoto, Junya (1987) Thin Film Thermometer for Cryogenic Temperature. Japanese Journal of Applied Physics, 26. 1743 doi:10.7567/jjaps.26s3.1743
Yoshitake, Masaaki, Nosaka, Toshikazu, Okamoto, Akio, Ogawa, Soichi (1993) Effects of Ion Species on Reactive-Ion-Beam-Sputtered Zr-N Films. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l113
Suzuki, Yoshihiko, Yotsuya, Tsutom, Yoshitake, Masaaki, Takiguchi, Katsumi, Ogawa, Soichi (1989) Modification of ZnO crystal orientation in dual ion beam sputtering deposition. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 732-735 doi:10.1016/0168-583x(89)90885-9
Suzuki, Yoshihiko, Yoshitake, Masaaki, Yotsuya, Tsutom, Takiguchi, Katsumi, Ogawa, Soichi (1989) ZnO crystal orientation change by bias voltage application to substrate or target in ion beam sputtering. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 854-857 doi:10.1016/0168-583x(89)90313-3
Yoshizawa, Masahito, Ikeda, Kôki, Sugawara, Hitoshi, Toyota, Naoki, Yotsuya, Tsutom, Yoshitake, Masaaki (1992) Electrical Resistivity and High-Field Magnetoresistance of Zr-N Film Thermometers. Japanese Journal of Applied Physics, 31. 2472-2478 doi:10.1143/jjap.31.2472
Yotsuya, Tsutom, Suzuki, Yoshihiko, Ogawa, Soichi, Imokawa, Hirofumi, Yoshikawa, Masahiro, Naito, Makio, Takahata, Ryoichi, Otani, Kohei (1989) Fabrication of Bi(Pb)SrCaCuO Thin Film of High-TcPhase. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l972
Suzuki, Yoshihiko, Kusaka, Tadaoki, Aoki, Akira, Aoyama, Takahiro, Yotsuya, Tsutom, Ogawa, Soichi (1989) The Contact Resistance of the YBa2Cu3O7-δ-Metal Film System. Japanese Journal of Applied Physics, 28. 2463-2467 doi:10.1143/jjap.28.2463
Watamori, Michio, Oura, Kenjiro, Shoji, Fumiya, Yotsuya, Tsutomu, Ogawa, Soichi, Hanawa, Teruo (1989) High-Energy Ion Beam Analysis of YBa2Cu3OxThin Films. Japanese Journal of Applied Physics, 28. 346-350 doi:10.1143/jjap.28.346
 
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